Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Christian Eichinger

Korbinian Perzlmaier

Fabian Kopp

Karl Engl

Tony Albrecht

Andreas Weimar

Anna Kasprzak-Zablocka

Kerstin Neveling

Bjoern Muermann

Björn Muermann

Maja Hackenberger

A method for producing an output coupling element and an optoelectronic component are disclosed. In an embodiment, a method includes providing an inorganic dielectric element with a surface in a chamber, wherein the inorganic dielectric element rotates in the chamber during operation and providing a structuring agent comprising water and ozone and introducing the structuring agent into the chamber so that the structuring agent contacts the surface of the inorganic dielectric element and a roughening is produced in the surface, wherein the inorganic dielectric element comprises aluminum oxide.

Method for producing an output coupling element for an optoelectronic component and optoelectronic component

According to the present disclosure, optoelectronic semiconductor chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. The p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which dielectric layer sequence includes a plurality of dielectric layers with different refractive indices.

Optoelectronic semiconductor chip

An electrical contact structure () for a semiconductor component () is specified, comprising a transparent electrically conductive contact layer (), on which a first metallic contact layer () is applied, a second metallic contact layer (), which completely covers the first metallic contact layer (), and a separating layer (), which is arranged between the transparent electrically conductive contact layer () and the second metallic contact layer () and which separates the second metallic contact layer () from the transparent electrically conductive contact layer (). Furthermore, a semiconductor component () comprising a contact structure () is specified.

Electrical contact structure for a semiconductor component, and semiconductor component

An optoelectronic semiconductor device has a semiconductor body including a semiconductor layer sequence with an active region that generates radiation, a semiconductor layer and a further semiconductor layer, wherein the active region is arranged between the semiconductor layer and the further semiconductor layer, a current spreading layer is arranged on a radiation exit face of the semiconductor body, the current spreading layer connects electrically conductively with a contact structure for external electrical contacting of the semiconductor layer, in a plan view of the semiconductor device the current spreading layer adjoins the semiconductor layer in a connection region, and the current spreading layer includes a patterning with a plurality of recesses through which radiation exits the semiconductor device during operation.

Optoelectronic semiconductor device

An optoelectronic semiconductor chip, comprising a first contact location () and a second contact location (), and a reflective layer (), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path () for the metal can form between the second and the first contact location. A means () which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.

Growing community of inventors

Wenzenbach, Germany

Christian Eichinger