Infineon Technologies Dresden Gmbh & Co . Kg

Christian Butschkow

Hans Taddiken

Valentyn Solomko

Christoph Kadow

Henning Feick

Uwe Seidel

Anton Steltenpohl

Dominik Heiss

Andrea Cattaneo

A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.

Methods and devices related to radio frequency devices

A method includes providing a semiconductor substrate having a first side and a second side opposite to the first side, forming at least one radio frequency device at the first side; thinning the semiconductor substrate from the second side; and processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device.

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Munich, Germany

Christian Butschkow