Commissariat a L'energie Atomique

Thomson-csf

Thales

Christian Brylinski

Sylvain Delage

Patrick Soukiassian

Andrew Mayne

Herve Blanck

Marie-Antoinette Poisson

Jean-François Jarno

G&eacute;rald Dujardin

Hanna Enriquez

Fabrice Amy

The invention relates to electromagnetic wave guiding devices or waveguides (f&#x3c;10 THz) and to processes for manufacturing these waveguides, which comprise at least one body () supporting at least one active wall (). The body () of the waveguide is made from a volume of a ceramic selected from the following: silicon carbides, aluminum nitride, boron nitrides, and especially 3C cubic and 2H hexagonal varieties of boron nitride, diamond, beryllium oxide or assemblies of said materials. Applications: waveguides, filter cavities, reflectors and antennas for radiofrequency waves and microwaves, atomic clocks and particle accelerators.

Guiding devices for electromagnetic waves and process for manufacturing these guiding devices

A highly oxygen-sensitive silicon layer ( ) is formed on a substrate ( ) of, for example, SiC. The layer ( ) has a 4&times;3 surface structure. The silicon layer ( ) is deposited on a surface of the substrate ( ) in a substantially uniform manner. The highly oxygen-sensitive silicon layer of the present invention may be used, for example in microelectronics.

Silicon layer highly sensitive to oxygen and method for obtaining same

A bipolar transistor in which the emitter possesses a double 'mesa' structure so as to achieve the maximum avoidance of the phenomena of electron/hole recombinations that have a deleterious effect on the current gain. The double mesa emitter can be made out of an alternation of materials M.sub.I /M.sub.II having different types of behavior with respect to a pair of etching methods. These materials may be GaInP and GaAs.

Bipolar transistor with optimized structure

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Neuilly sur Seine, France

Christian Brylinski