Technische Unversität Berlin

Dcg Systems Gmbh

Technische Universitaet Berlin

Ihp Gmbh-innovations for High Performance Microelectronics/leibniz-instit. Für Innovativeihp Gmbh-innovations for High Performance Microelectronics/leibniz-instit. Für Innovative

Christian Boit

Theodore R Lundquist

Chun-Cheng Tsao

Uwe Kerst

Marco Lisker

Peter Sadewater

Elham Amini

Clemens Helfmeier

Norbert Herfurth

Jean-Pierre Seifert

Uwe Jürgen Kerst

Stephan Schoemann

A semiconductor device, a method of operating the semiconductor device, and a method of fabricating the semiconductor device are disclosed. The semiconductor device comprises a substrate stack comprising two permanently bonded semiconductor bodies stacked in a depth direction that points perpendicularly from a front side towards a back side of the substrate stack, and which share a buried bonding interface. One of the semiconductor bodies, the protection body, comprises an active region with a light emitter at the buried bonding interface, and a light absorption region which is opaque for light emitted from the light emitter. Another of the semiconductor bodies, the circuit body, extends from the buried bonding interface to the front side, is transmissive for the light emitted from the light emitter, and comprises a light detector at the front side to provide a detector signal indicative of a detected light intensity of light emitted from the light emitter and transmitted through the circuit body. A driver unit of the semiconductor device is configured to drive operation of the light emitters using predetermined operation parameters.

Semiconductor device with back side protection mechanism

A charge measuring device detects focused ion beam attacks on an integrated semiconductor circuit with a capacitor, a field effect transistor, and a charge collecting device all manufactured in the integrated semiconductor circuit and insulated from additional circuit elements. A first pole of the capacitor is conductively connected to the charge collecting device and a gate of the field effect transistor. When a voltage is applied to the second pole of the capacitor, a drain source current flows through the field effect transistor, and a relationship between the voltage and the drain source current is ascertained. A comparison of the relationship with a previously ascertained relationship indicates a change of the charge quantity stored in the capacitor by the charge collecting device.

Charge measuring device with integrated FET, capacitor, and charge accumulation device

Localized trenches or access holes are milled in a semiconductor substrate to define access points to structures of an integrated circuit intended for circuit editing. A conductor is deposited, such as with a focused ion beam tool, in the access holes and a localized heat is applied to the conductor for silicide formation, especially at the boundary between a semiconductor structure, such as diffusion regions, and the deposited conductor. Localized heat may be generated at the target location through precise laser application, current generation through the target location, or a combination thereof.

Apparatus and method of forming silicide in a localized manner

Growing community of inventors

Berlin, Germany

Christian Boit