University of Nebraska

Intel Corporation

University of California

The State University of New York

Quantum Devices, Inc.

Christian Binek

Peter A Dowben

Kirill D Belashchenko

Dmitri E Nikonov

Kang L Wang

Jeffry A Kelber

Jonathan Bird

William Echtenkamp

Aleksander Wysocki

Sai Mu

Mike Street

Ather Mahmood

Xia Hong

Peter Arnold Bowden

A hall bar device for a memory or logic application can include a gate electrode, a boron-doped chromia layer on the gate electrode; and a hall bar structure with four legs on the boron-doped chromia layer. For a memory application, the hall bar device can be written to by applying a pulse voltage across the gate electrode and one leg of the hall bar structure in the absence of an applied magnetic field; and can be read from by measuring a voltage across the one leg of the hall bar structure and its opposite leg.

Hall bar device for memory and logic applications

Antiferromagnetic magneto-electric spin-orbit read (AFSOR) logic devices are presented. The devices include a voltage-controlled magnetoelectric (ME) layer that switches polarization in response to an electric field from the applied voltage and a narrow channel conductor of a spin-orbit coupling (SOC) material on the ME layer. One or more sources and one or more drains, each optionally formed of ferromagnetic material, are provided on the SOC material.

Magneto-electric logic devices using semiconductor channel with large spin-orbit coupling

A magnetoelectric composition of boron and chromia is provided. The boron and chromia alloy can contain boron doping of 1%-10% in place of the oxygen in the chromia. The boron-doped chromia exhibits an increased critical temperature while maintaining magnetoelectric characteristics. The composition can be fabricated by depositing chromia in the presence of borane. The boron substitutes oxygen in the chromia, enhancing the exchange energy and thereby increasing N&#xe9;el temperature.

Magnetoelectric chromia having increased critical temperature

A method for refrigeration through voltage-controlled entropy change includes applying a voltage signal to a piezoelectric material to generate strain in the piezoelectric material, generating strain in a magnetic material attached to the piezoelectric material, and generating a change in a temperature of the magnetic material in response to the strain in the magnetic material.

Refrigeration through voltage-controlled entropy change

The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS, WS, MoSe, WSeand mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.

Magneto-electric voltage controlled spin transistors

Growing community of inventors

Lincoln, NE, United States of America

Christian Binek