Alcatel Alsthom Compagnie Generale D'electricite

Compagnie Generale D'electricite

Societe Nationale Elf Aquitaine

Solarforce

Alcatel

U.S. Philips Corporation

Nexans

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Alcatel N.v.

Christian Belouet

Claude Remy

Michel Mautref

Isabelle Riant

Alain Pastouret

Laurent Gasca

Thierry Verhaege

Didier Lecomte

Patrick Dubots

Sylvaine Kerboeuf

Christine Moreau

Pascal Baniel

Jean-Pierre Dumas

Bertrand Joly

Bruno Pintault

Jacques Charles Bunel

Michel Ribes

Dominique Boccon-Gibod

Jean-Jacques Lucien Brissot

Philippe Mocaer

Didier Chambonnet

Rene Martres

Patricia Laurens

A method for manufacturing a single crystal may be by solution growth from a seed crystal, in a unit including a tank and a growth platform having a lower plate. The method may include: fastening the seed to the lower plate; introducing a crystallization solution of density dinto the tank; treating the solution in order to render it supersaturated; bringing the seed into contact with the supersaturated solution; rotating the platform until the single crystal is obtained. Before bringing the seed into contact with the supersaturated solution, the method may include forming, in the tank, of a zone for trapping parasitic crystals of density dby introducing, into the tank, a liquid, immiscible with the growth solution, of density d>dand d<d, which forms with the growth solution an interface located below the lower plate.

Method for manufacturing a single crystal by solution growth enabling trapping of parasitic crystals

The invention relates to a method of fabricating at least one polycrystalline silicon plate () with one () of its two faces presenting predetermined relief, in which method a layer of polycrystalline silicon () is deposited on at least one () of the two faces of a support (). The method comprises the steps of embossing said face () of the support () to impart thereto a shape that is complementary to said relief; depositing said polycrystalline silicon layer () on said embossed face () of the support (), the surface (or) of said polycrystalline silicon layer situated in contact with said embossed face (or) then taking on the shape of said relief; and eliminating said support in order to obtain said polycrystalline silicon plate (or). The invention is applicable to fabricating solar cells.

Method of fabricating polycrystalline silicon plates

The invention relates to a method of fabricating photovoltaic cells in which at least one layer of semiconductor material is deposited continuously on a carbon ribbon () to form a composite ribbon (), said layer having a free face () opposite from its face in contact with the carbon ribbon. According to the invention, at least one treatment () is applied to the layer of semiconductor material, from said free face (), in order to implement photovoltaic functions of the cells on said layer, prior to eliminating the carbon ribbon (). The invention makes it possible to increase productivity in the fabrication of photovoltaic cells, which cells can be of very small thicknesses.

Method of fabricating photovoltaic cells

The present invention relates to a device () for depositing a layer based on polycrystalline silicon onto a substantially plane, elongate, moving support () having two longitudinal faces () and two longitudinal side edges (), the device comprising:

Device for depositing a layer of polycrystalline silicon on a support

The present invention relates to a carbon ribbon for covering in a thin layer of semiconductor material, and to a method of deposited such a layer on a substrate constituted by a carbon ribbon. At least one of the two faces of the carbon ribbon is for covering in a layer of semiconductor material by causing the ribbon to pass substantially vertically upwards through a bath of molten semiconductor material. According to the invention, the two edges of at least one of the two faces of the carbon ribbon project so as to form respective rims.

Carbon ribbon to be covered with a thin layer made of semiconductor material and method for depositing a layer of this type

A tunable optical filter comprising an index grating produced in a waveguide defining a longitudinal direction of propagation of an incident optical signal, said grating being defined by a plurality of optical parameters, is characterized in that the optical guide contains semiconductor nanoparticles and in that the index grating is made up of a refractive index variation in the guide that is at least partly induced by a Kerr effect linked to the 3order dielectric susceptibility (&#x3c7;) of said nanoparticles, at least one of said parameters of said index grating being modified by application of an optical control signal coupled into the guide and propagating longitudinally in said guide.

Reconfigurable optical filter

The present invention concerns an optical guide () comprising an amplifier medium including:

Optical guide comprising an amplifier medium and a method for producing said guide

A process for metallizing a substrate part includes the following three steps: coating the part with a precursor composite material layer consisting of a polymer matrix doped with photoreducer material dielectric particles, irradiating the surface to be metallized of the substrate part with a light beam emitted by a laser, and immersing the irradiated part in an autocatalytic bath containing metal ions, with deposition of the latter in a layer on the irradiated surface. The dimension of the dielectric particles is less than or equal to 0.5 microns. The method is intended in particular for producing a metallized part including a substrate part consisting of a flexible film.

Method of metallizing a substrate part

A buffer layer structure based on doped ceria for providing optimized lattice match with a YBCO layer in a conductor, a lattice matching layer for use in said structure and process of manufacturing thereof. Said buffer layer comprises a CeO layer doped with a dopant, and has a superconductive layer of YBCO on said CeO layer. The invention is characterized in that the CeO layer is a lattice matching layer.

Buffer layer structure based on doped ceria for providing optimized lattice match with a YBCO layer in a conductor

A thin ferromagnetic film is deposited directly onto the surface of a waveguide. The crystalline orientation of the ferromagnetic film is restricted to a predetermined orientation by pulverizing nuclei that do not have the predetermined orientation.

Method of depositing a ferromagnetic film on a waveguide and a

A composite based on a superconducting oxide having a high critical temperature, characterized by the fact that it is constituted by glass and said oxide, the glass being such that its vitreous transition temperature is not greater than 750K, the volume fraction of the glass lying in the range 2% to 40%, said oxide existing in the glass in the form of crystallites having substantially the same orientation.

Superconducting oxide-based composite material

A method of preparing faces of a laser based on III-IV compounds, the method comprising the following operations:

Method for preparing laser faces

A method of preparing a substrate with a view to depositing a thin layer of a superconductive material thereon, wherein an operation is performed of depositing on the substrate an intermediate material having the property of having a crystal lattice constant that is a function of the percentage of a doping element, the depositing operation being initiated with a concentration of the doping element such that the lattice constant of the intermediate material is equal to or as close as possible to the lattice constant of the substrate, the proportion of the doping element being continuously varied during the depositing operation to a proportion of the doping element such that the lattice constant of the intermediate material is equal to or as close as possible to the lattice constant of the superconductive material.

Method of depositing a superconductor layer on a substrate through an

A method of making a solid magnetic material from Sm.sub.2 Fe.sub.17 N.sub.3-x type intermetallic nitride powder, where 0.ltoreq.x.ltoreq.1, comprises the following steps: a--the powder is mixed intimately with glass powder having a conversion temperature Tg between 260.degree. C. and 310.degree. C. and a softening temperature Tf less than 400.degree. C., the proportion of glass powder being between 10% and 30% of the total volume; b--the mixture is compressed to obtain a solid; c--the solid obtained is subjected in a neutral gas atmosphere to a heat cycle during which a temperature not less than Tf+5.degree. C. and not more than 420.degree. C. is maintained for at least one hour.

Method of making a solid magnetic material from Sm.sub.2 Fe.sub.17

A superconducting current limiter comprising a bar or tube of high temperature superconducting material of the composite type made up of glass and a high temperature superconducting oxide, the volume fraction of the glass lying in the range 10% to 40%, the bar or tube being selected to comply with the following inequalities:

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Sceaux, France

Christian Belouet