Stmicroelectronics(tours) Sas

Stmicroelectronics S.a.

Sgs-thomson Microelectronics S.a.

Stmicroelectronics (rousset) Sas

Christian Ballon

Eric Bernier

Jean-Michel Simonnet

Mathieu Rouviere

André Bremond

Laurent Moindron

Cédric Appere

Rachel Pezzani-Legall

A structure protects a SLIC telephone line interface against overvoltages lower than a negative threshold or higher than a positive threshold. The structure includes at least one thyristor connected between each conductor of the telephone line and a reference potential. For all of the included thyristors, a metallization corresponding to the main electrode on the gate side is in contact, by its entire surface, with a corresponding semiconductor region. Furthermore, the gate of each thyristor is directly connected to a voltage source defining one of the thresholds.

Protection of a telephone line against overvoltages

An integrated circuit includes a vertical Shockley diode and a first vertical transistor. The diode is formed by, from top to bottom of a semiconductor substrate, a first region of a first conductivity type, a substrate of a second conductivity type, and a second region of the first conductivity type having a third region of the second conductivity type formed therein. The vertical transistor is formed by, also from top to bottom, a portion of the second region and a fourth region of the second conductivity type. The third and fourth regions are electrically connected to each other.

Overvoltage protection component

A structure for protecting a circuit connected to first and second rails of a telephone connection against overvoltages, including: first and second diodes in anti-series between the first and second rails; a first capacitor in parallel with a first resistor between a first node common to the first and second diodes and a low voltage reference node; and a protection element capable of removing fast overvoltages between any of the rails and the low reference voltage node when these overvoltages exceed a first threshold associated with the voltage of the first node.

Anti-lightning protection for telephone connection

The present invention relates to a monolithic component of protection of a line against overvoltages than a determined positive threshold or smaller than a determined negative threshold, including in antiparallel a cathode-gate thyristor (Th) and an anode-gate thyristor (Th), the gate of the cathode-gate thyristor being connected to a negative threshold voltage (&#x2212;V) via a gate current amplification transistor (T), the gate of the anode-gate thyristor being connected to a positive threshold voltage (+V). The monolithic component is made in a substrate divided into wells separated by isolating walls (), the smaller surfaces of which are coated with insulating layers (), the smaller surface of the substrate being uniformly coated with a metallization (M).

Subscriber interface protection circuit

A low-capacitance bidirectional device of protection against overvoltages, intended to be used at high frequencies, including first and second discrete one-way Shockley diodes, the cathode and the anode of the first diode being respectively connected to the anode and to the cathode of the second diode, the break-over voltages of each diode ranging between 50 and 125 V.

Low-capacitance bidirectional protection device

The present invention relates to a semiconducting structure constituting a protected rectifying bridge implemented in an N-type semiconductor substrate divided into first, second, and third wells by vertical P-type isolating walls, in which the rear surface of the substrate is coated with a first metallization and in which each of the first and second wells includes a vertical diode and a vertical Shockley diode. The third well includes a P-type isolating layer on its rear surface side in contact with the first metallization and, on its front surface side, two lateral diodes, each of which is formed between a P-type region and the substrate.

Monolithic protected rectifying bridge

A protection semiconductor component includes at least two pairs of main Shockley diodes, each pair including two parallel diodes, head-to-tail connected between a front surface metallization and a rear surface metallization, the rear surface metallization being common to the two pairs of diodes. Each of the main diodes whose blocking junction corresponds to a distinct well on the side of the front surface is associated with at least one auxiliary Shockley diode having the same polarity and a lower triggering threshold, the triggering of one auxiliary diode thus causing the triggering of the other auxiliary diode and of the associated main Shockley diodes.

Growing community of inventors

Tours, France

Christian Ballon