Thomson-csf

Christian Arnado

Gerard Nuzillat

A method of adjusting the threshold voltages of field effect transistors, in particular of SCHOTTKY gate field-effect transistors, is provided. During the process of manufacture of the transistor, the channel charge carrier density is modified by ion implantation. A monitoring device, in the form of a test transistor, is manufactured at the same time as the production transistors and on the same wafer thereas. An appendix of the test transistor makes it possible to measure the threshold voltage and saturation current, during ionic implantation.

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Paris, France

Christian Arnado