Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag

Other

Christian Andrae

Holger Lundt

Karl Egglhuber

Hans Olkrug

Bert Ripper

Maximilian Kaeser

Jochen Greim

Helmut K&ouml;lker

Josef Frumm

A sawing wire is for the simultaneous cutting and lapping of a multiplicity of wafers from a hard brittle workpiece. The sawing wire exhibits torsion. There is also a method for cutting and lapping using the sawing wire.

Sawing wire and method for the cutting and lapping of hard brittle workpieces

A method is for simultaneously cutting off a multiplicity of wafers from a hard, brittle workpiece which has a longitudinal axis and a peripheral surface. The workpiece is guided, by means of a translational relative movement, directed perpendicular to the longitudinal axis, between the workpiece and a wire web of a wire saw with the aid of a feed device, through the wire web which is formed by a sawing wire. The workpiece is rotated about the longitudinal axis while the wafers are being cut off. There is also a wire saw which is suitable for carrying out the method and has a device for holding and for rotating the workpiece about the longitudinal axis.

Method and device for simultaneously cutting off a multiplicity of wafers from a workpiece

A process and a device will produce a cylindrical single crystal of semicuctor material with the smallest possible alignment error of the crystal lattice. A process for cutting semiconductor wafers from two or more such single crystals is by means of wire sawing. The process for producing the single crystal is as follows: (a) a single crystal with an alignment error of the crystal lattice equal to at most 1.5.degree. is produced; (b) the single crystal is arranged in such a way that the single crystal can be rotated about two axes of rotation, the axes of rotation being perpendicular to two planes that are spanned by two axes of an orthogonal coordinate system with axes x, y and z; (c) the single crystal is rotated about the axes of rotation until the crystal axis is parallel to the x,y plane and parallel to the x,z plane of the coordinate system; (d) pads are fitted to the ends of the single crystal; and (e) the single crystal is rotated about the crystal axis, the single crystal being clamped between the pads in a grinding machine, and a lateral surface of the single crystal is ground until the single crystal has a specific uniform diameter.

Process and device for producing a cylindrical single crystal and

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Tussling, Germany

Christian Andrae