Commissariat a L'energie Atomique

S.o.i.tec Silicon on Insulator Technologies

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Commissariat À L'energie Atomique (Cea)

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Soitec

Christelle Lagahe-Blanchard

Hubert Moriceau

Olivier Rayssac

Nadia Ben Mohamed

Franck Fournel

Ian Cayrefourcq

Nguyet-Phuong Nguyen

Konstantin Bourdelle

Aurélie Tauzin

Beryl Blondeau

A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.

Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation

The invention relates to a method of catastrophic transfer of a thin film including implanting in a source substrate a first species of ions or gas at a given depth and a second species of ions or gas, the first species being adapted to generate defects and the second species being adapted to occupy those defects. The process further includes applying a stiffener in intimate contact with the source substrate, applying a heat treatment to that source substrate, at a given temperature for a given time, so as to create, substantially at the given depth, a buried weakened zone, without initiating the thermal splitting of a thin film, and applying a localized amount of energy, for example mechanical stresses, to that source substrate so as to provoke the catastrophic splitting of a thin film, the thin film having a substantially planar face opposite to the face surface of the source substrate.

Method of catastrophic transfer of a thin film after co-implantation

This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step.

Surface treatment for multi-layer wafers formed from layers of materials chosen from among semiconducting materials

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Saint Joseph de Rivière, France

Christelle Lagahe-Blanchard