Siemens Aktiengesellschaft

Christa Grabmaier

Juergen Leppert

Hermann Boedinger

Helmut Thomann

Josef Grabmaier

Wolfgang Rossner

Richard Falckenberg

Andreas Jahnke

Thomas Berthold

Wolfgang Schubert

Heinz P Holzapfel

Siegfried Haussuehl

Josef Kotschy

Franz Otto

August Lerchenberger

A phosphor for a radiation detector is based on a phosphor ceramic of a rare earth oxisulfide with the general sum formula (M.sub.1-x Ln.sub.x).sub.2 O.sub.2 S, wherein M is at least one element from the group Y, La and Gd, Ln is at least one element of the group Eu, Pr, Tb, Yb, Dy, Sm and Ho, and wherein (2.times.10.sup.-1).gtoreq..times..gtoreq.(1.times.10.sup.-6) and which is doped an element D selected from Zr, Ti and Hf and at least one element A selected from Co, Mn and Ni for reducing the afterglow.

Phosphor having reduced afterglow

A new and improved phosphor composition for a radiation detector is provided which includes a rare earth oxisulfide phosphor ceramic containing an afterglow reducing amount of an afterglow suppressant D, wherein D is at least one member selected from the group Zr, Ti, Hf, Se or Te.

Phosphor with an additive for reducing afterglow

In an improved method for manufacturing a phosphor ceramic on the basis of a rare earth oxisulfide, a phosphor powder having a high specific surface of more than 10 m.sup.2 per gram is employed and is compressed to form a high-density, optically pure and translucent ceramic by single-axis hot-pressing under a reducing atmosphere.

Method for manufacturing a phosphor having high translucency

A phosphor for a high energy radiation detector is formed by a rare earth oxisulfide having the general sum formula (M.sub.1-x Ln.sub.x).sub.2 O.sub.2 S, wherein M is at least one element of the group Y, La and Gd, Ln stands for at least one element of the group Eu, Ce, Pr, Tb, Yb, Dy, Sm and Ho, and whereby (2.times.10.sup.-1).gtoreq..times..gtoreq.(1.times.10.sup.-6), which also contains molybdenum in a proportion between 10.sup.-1 and 10.sup.-6 mol percent for reducing the afterglow of the phosphor.

Phosphor having reduced afterglow and method for manufacturing same

Process for producing a phosphor layer by reacting a doped substance

Recrystallized silicon plates are readily removed from a carrier member after melting and recrystallization, the carrier member being composed of a material that is not appreciably wettable by molten silicon, through the use of a parting agent between the silicon and the carrier in solid form as a powder or a raw foil. Fine quartz sand, very fine grained silicon powder, or quartz glass fiber fabric can be employed as the parting agent. The method is employed for the inexpensive manufacture of self-supporting silicon crystal plates for solar cells and allows throughput drawing rates of greater than 1 m.sup.2 /min.

Method for the manufacture of large area silicon crystal bodies for

Starting plate-like silicon bodies matched to the dimensions desired in a product silicon crystal bodies are melted and then crystallized on a horizontal carrier member having a net structure using a heater arrangement. The carrier member is substantially not wettable by molten silicon and preferably consists of a quartz glass fiber fabric and is removable after the crystallization. The method is useful for the manufacture of silicon for solar cells and prevents contaminants from the carrier member from being incorporated into the product silicon crystal body and thereby deteriorating the electrical properties of the solar cells.

Method for making large-surface silicon crystal bodies

A method and an apparatus is provided for the manufacture of large-area silicon crystal bodies useful for solar cells. A carrier member consisting of a net-like graphite fabric or quartz fabric is moved horizontally through a heater arrangement carrying silicon plates on its surface which are matched to the dimensions of the carrier member. The silicon body is caused to melt and the molten silicon fills in the meshes of the net after which crystallization is induced. Meshes having dimensions up to about 10 mm.times.10 mm are thus filled with silicon. The technique involves low production costs and high product crystal quality and serves for the continuous manufacture of silicon ribbons for solar cells.

Method large-area silicon bodies

Large surfaced, pore-free silicon bodies useful for processing into solar cells are produced by providing at least two layers formed from at least two distinct silicon materials, each containing different amounts of germanium therein and thus having different melting points. A laminate is formed of such layers and sintered at a temperature at which only one of the silicon materials becomes molten so that the resultant molten layer effectively seals the pores of the other layers and upon cooling a unitary silicon body is attained. In certan embodiments, a molten silicon material is applied as a liquified film onto a solidified layer composed of different silicon material.

Method for producing plate-, tape- or film-shaped Si crystal bodies for

Selectively shaped silicon crystal bodies, such as plate-, tape- or film-shaped bodies, having crystalline pillarlike structures therein are produced as substantially porefree bodies by forming a slurry from an admixture of relatively fine sized silicon particles, optional additives and a liquid binder, extruding such slurry as a relatively thin layer onto a first support member, drying such extruded layer until it becomes self-supporting and removing such support member, applying a substantially uniform layer of a germanium powder onto a surface of such self-supporting layer and then sintering the resultant structure in a protective gas atmosphere at temperatures below about 1430.degree. C. until a layer of crystalline silicon particles is generated, which particles have an average diameter substantially corresponding to the thickness of the dried layer.

A monocrystalline Bi.sub.2 Ge.sub.3 O.sub.9 is formed, for example, via the Czochralski technique from a melt containing pure Bi.sub.2 O.sub.3 and GeO.sub.2 at a molecular ratio of 1:3. This crystal is useful as an x-ray spectrometer crystal and/or as a light defector crystal in conjunction with an ultrasonic deflection field properly applied to such crystals.

Crystalline Bi.sub.2 Ge.sub.3 O.sub.9 and its preparation

Selectively shaped silicon crystal bodies, such as plate- or tape-shaped bodies, having crystalline pillar-like structures therein are produced by forming a slurry from an admixture of relatively fine sized silicon particles and a liquid binder, extruding such slurry as a relatively thin layer onto a first support member, drying such extruded layer until it becomes self-supporting and removing such support member, and then sintering such dried layer in a protective gas atmosphere at temperatures below about 1430.degree. C. until a layer of crystalline silicon particles are generated or grown having an average diameter substantially corresponding to the thickness of the dried slurry layer.

Method of producing plate- or tape-shaped silicon crystal bodies having

X-rays or .gamma.-rays are detected by irradiating a beam of high energy radiation onto a crystalline bismuth oxide compound having the formula Bi.sub.10-14 X.sub.1 O.sub.n wherein X is at least one element selected from the group consisting of Al, Ga, Ge, Si and Ti and n is a numeral substantially equal to the stoichiometric amount of oxygen within the compound. The above bismuth oxide crystalline compound may be placed in a radiation dosimeter or be applied as a radiation-sensitive coating on a cylinder or plate of an apparatus for producing electrostatic copies (i.e., an in a xerographic process or the like). This is a division of application Ser. No. 837,197, filed Sept. 28, 1977.

Electrophotographic element with bismuth oxide compound

X-rays or .gamma.-rays are detected by irradiating a beam of high energy radiation onto a crystalline bismuth oxide compound having the formula Bi.sub.10-14 X.sub.1 O.sub.n wherein X is at least one element selected from the group consisting of Al, Ga, Ge, Si and Ti and n is a numeral substantially equal to the stoichiometric amount of oxygen within the compound. The above bismuth oxide crystalline compound may be placed in a radiation dosimeter or be applied as a radiation-sensitive coating on a cylinder or plate of an apparatus for producing electrostatic copies (i.e., an in a xerographic process or the like).

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Berg, Germany

Christa Grabmaier