Legerity, Inc.

Chris Speyer

William E Moore

The present invention is generally directed to an optical isolator device, and various methods of making same. In one illustrative embodiment, the method comprises obtaining a single SOI substrate, the SOI substrate having an active layer comprised of silicon and a buried insulation layer, forming a doped layer of silicon above the active layer of the SOI substrate, forming first and second isolated regions in at least the doped layer of silicon, forming a photon generating device in the first isolated region, and forming a photon receiving device in the second isolated region. In one illustrative embodiment, the device comprises a substrate comprised of a bulk layer of silicon, a buried insulation layer formed on the bulk silicon layer, and a doped layer of silicon positioned above the buried insulating layer, first and second isolated regions formed in the doped layer of silicon, a photon generating device formed in the first isolated region, and a photon receiving device formed in the second isolated region.

Optical isolator device, and method of making same

The present invention is generally directed to a multi-stage epi process for forming semiconductor devices, and the resulting device. In one illustrative embodiment, the method comprises forming a first layer of epitaxial silicon above a surface of a semiconducting substrate, forming a second layer of epitaxial silicon above the first layer of epitaxial silicon, forming a third layer of epitaxial silicon above the second layer of epitaxial silicon, forming a trench isolation region that extends through at least the third layer of epitaxial silicon and forming a portion of a semiconductor device above the third layer of epitaxial silicon within an area defined by the isolation region. In one illustrative embodiment, the device comprises a substrate, a first layer of epitaxial silicon formed above the substrate, a second layer of epitaxial silicon formed above the first layer of epitaxial silicon, a third layer of epitaxial silicon formed above the second layer of epitaxial silicon, a trench isolation region that extends through at least the third layer of epitaxial silicon, the trench isolation region defining an active area, and at least one component of a semiconductor device formed in or above the third layer of epitaxial silicon within the active area.

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Austin, TX, United States of America

Chris Speyer