Ekc Technology Inc.

Chris Reid

Wai Mun Lee

Robert J Small

Bakul P Patel

Douglas Holmes

Jerome Daviot

Tomoko Suzuki

Toshitaka Hiraga

Yasuo Katsuya

A variety of compositions that are particularly applicable for removing one or more of resist, etching residue, planarization residue, and copper oxide from a substrate comprising copper and a low-k dielectric material are described. The resist, residues, and copper oxide are removed by contacting the substrate surface with the composition, typically for a period of 30 seconds to 30 minutes, and at a temperature between 25&#xb0; and 45&#xb0; C. The composition includes a fluoride-providing component; at least 1% by weight of a water miscible organic solvent; an organic acid; and at least 81% by weight water. Typically the composition further includes up to about 0.4% of one or more chelators.

Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material

A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

Compositions for cleaning organic and plasma etched residues for semiconductor devices

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Glasgow, United Kingdom

Chris Reid