Peregrine Semiconductor Corporation

Psemi Corporation

Chris Olson

Dan William Nobbe

Jeffrey A Dykstra

James S Cable

David Kovac

Gary Frederick Kaatz

Michael P Gaynor

Kelly Michael Mekechuk

David Halchin

Tero Tapio Ranta

Simon Edward Willard

Neil Calanca

Jaroslaw E Adamski

Poojan Wagh

Joseph P Golat

Dan Willaim Nobbe

A transistor stack can include a combination of floating and body tied devices. Improved performance of the RF amplifier can be obtained by using a single body tied device as the input transistor of the stack, or as the output transistor of the stack, while other transistors of the stack are floating transistors. Transient response of the RF amplifier can be improved by using all body tied devices in the stack.

Body tie optimization for stacked transistor amplifier

A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.

Scalable periphery tunable matching power amplifier

An amplifier with switchable and tunable harmonic terminations and a variable impedance matching network is presented. The amplifier can adapt to different modes and different frequency bands of operation by appropriate switching and/or tuning of the harmonic terminations and/or the variable impedance matching network.

Variable impedance match and variable harmonic terminations for different modes and frequency bands

Various envelope tracking amplifiers are presented that can be switched between an ET (envelope tracking) mode and a non-ET mode. Switches and/or tunable components are utilized in constructing the envelope tracking amplifiers that can be switched between the ET mode and the non-ET mode.

Amplifiers operating in envelope tracking mode or non-envelope tracking mode

An envelope tracking amplifier having stacked transistors is presented. The envelope tracking amplifier uses dynamic bias voltages at one or more gates of the stacked transistors in addition to a dynamic bias voltage at a drain of a transistor.

Amplifier dynamic bias adjustment for envelope tracking

Control systems and methods for power amplifiers operating in envelope tracking mode are presented. A set of corresponding functions and modules are described and various possible system configurations using such functions and modules are presented.

Control systems and methods for power amplifiers operating in envelope tracking mode

An integrated circuit architecture that provides a path having relatively low thermal resistance between one or more electronic devices and one or more thermal structures formed on an insulator layer on a substrate. Independent parallel thermal conduction paths are provided through the insulator layer, such as a buried oxide ('BOX') layer, to allow heat to flow from the substrate layer to a thermal structure disposed upon the BOX layer. In some cases, the substrate is a silicon substrate layer supporting the thermal structure and a heat source, such as an electronic device (e.g., power amplifier, transistor, diode, resistor, etc.).

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Palatine, IL, United States of America

Chris Olson