United States of America As Represented by the Secretary of the Air Force

Chris Muratore

Timothy Scott Fisher

Andrey A Voevodin

Nicholas R Glavin

A nanoelectronics structure is disclosed which includes a substrate layer which has least a first surface and also has a thickness of less than 100 nm. The nanoelectronics structure also includes a dielectric layer, which is deposited on the first surface of the substrate layer and has a thickness of less than 100 nm. This dielectric layer is made up of at least 90 mole percent amorphous boron nitride. Also disclosed is a method for forming a dielectric layer on a substrate using pulsed laser deposition.

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Dayton, OH, United States of America

Chris Muratore