Hewlett-packard Development Company, L.p.

Oregon State University

Chris Knutson

Randy Hoffman

Douglas A Keszler

John F Wager, Iii

Rick Presley

A thin-film transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, a channel layer, and a passivation layer. The channel layer has a first surface and an opposed second surface, where the first surface is disposed over at least a portion of the gate dielectric. The channel layer also has a first oxide composition including at least one predetermined cation. The passivation layer is disposed adjacent to at least a portion of the opposed second surface of the channel layer. The passivation layer has a second oxide composition including the at least one predetermined cation of the first oxide composition and at least one additional cation that increases a bandgap of the passivation layer relative to the channel layer.

Growing community of inventors

Corvallis, OR, United States of America

Chris Knutson