University of Bristol

Chris Hutson

Neil Anthony Fox

Thomas Scott

Hugo Dominguez Andrade

Liam Payne

Gordon Robson Mackenzie

Provided herein is a diamond gammavoltaic cell comprising: a diamond body having a diamond body surface including first and second opposing surfaces; a low-barrier electrical contact formed on the first surface; and a high-barrier electrical contact formed on the second surface, wherein the diamond body surface that is not in contact with either the low-barrier electrical contact or the high-barrier electrical contact is at least partially surface transfer doped to provide a p-type surface.

Diamond gammavoltaic cell

A radiation powered device includes a first electrode, a second electrode, a semiconductor disposed between the first and second electrodes, and a radioactive source configured to generate a flow of electrons through the semiconductor between the first and second electrodes, wherein the semiconductor comprises diamond material, wherein the radioactive source is embedded within the diamond material, wherein the radioactive source comprises a beta-emitting radioisotope, and atoms of the radioisotope are either substitutionally or interstitially integrated into the diamond material, wherein the diamond material comprises a plurality of regions in the form of layers within a continuous crystal lattice of the diamond material, and wherein at least one layer of the diamond material comprises the radioactive source and at least one layer of the diamond material does not comprise the radioactive source.

Radiation powered devices comprising diamond material and electrical power sources for radiation powered devices

Provided herein is a radiation powered device comprising a semiconductor comprising a diamond material.

Growing community of inventors

Bristol, United Kingdom

Chris Hutson