Newport Fab, LLC

Chris Cureton

David J Howard

Marco Racanelli

Paul D Hurwitz

Arjun Kar-Roy

Todd Thibeault

Volker Blaschke

According to an exemplary embodiment, a semiconductor die including at least one deep silicon via is provided. The deep silicon via comprises a deep silicon via opening that extends through at least one pre-metal dielectric layer of the semiconductor die, at least one epitaxial layer of the semiconductor die, and partially into a conductive substrate of the semiconductor die. The deep silicon via further comprises a conductive plug situated in the deep silicon via opening and forming an electrical contact with the conductive substrate. The deep silicon via may include a sidewall dielectric layer and a bottom conductive layer. A method for making a deep silicon via is also disclosed. The deep silicon via is used to, for example, provide a ground connection for power transistors in the semiconductor die.

Method for forming deep silicon via for grounding of circuits and devices, emitter ballasting and isolation

Deep silicon via for grounding of circuits and devices, emitter ballasting and isolation

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Laguna Beach, CA, United States of America

Chris Cureton