Semiconductor Manufacturing International (shanghai) Corporation

Anji Microelectronics (shanghai) Co., Ltd.

Anji Microelectronics Co., Ltd.

Chris Chang Yu

Andy Yang

Herb He Huang

Chun Yang

Shumin Wang

Danny Zhenglong Shiao

Ziru Ren

Chunxiao Yang

Hongxiu Peng

A composition for removing a photoresist layer and a method for using it are disclosed. The composition comprises a chemical portion which includes water and chemical constituents dissolving or softening the photoresist layer and a mechanical portion which is abrasive particles. Using the composition and the method according to the present invention can decrease the conventional two steps of removing a photoresist layer process to one step, thereby simplifying the procedure, shortening the removing time and reducing the cost. The chemical constituents in the composition according to the present invention are of low toxicity and flammability and the amount used is small, which makes it more friendly with the environment and decreases the expense of disposing the waste.

Composition for removing photoresist layer and method for using it

This invention disclosed a chemical mechanical polishing slurry, which includes at least one abrasive particle, an oxidant and a carrier. The oxidant is combined with a big metallorganic compound; and the applications and corresponding handling method are also disclosed. This invention slurry can realize high removal rate, no corrosion, low defectivity and high plan.

Chemical mechanical polishing slurries, their applications and method of use thereof

A method for fabricating an integrated circuit device. A plurality of MOS transistor devices are formed overlying a semiconductor substrate. Each of the MOS transistor devices includes a nitride cap and nitride sidewall spacers. An interlayer dielectric layer is formed overlying the plurality of MOS transistor devices. A portion of the interlayer dielectric material is removed to expose at least portions of three MOS transistor devices and expose at least three regions between respective MOS transistor devices. The method deposits polysilicon fill material overlying the exposed three regions and overlying the three MOS transistor devices. The method performs a chemical mechanical planarization process on the polysilicon material to reduce a thickness of the polysilicon material exposing a portion of the interlayer dielectric material until the cap nitride layer on each of the MOS transistors has been exposed using the cap nitride layer as a polish stop layer.

Method and structure for landing polysilicon contact

A method for chemical mechanical polishing of mirror structures. Such mirror structures may be used for displays (e.g., LCOS, DLP), optical devices, and the like. The method includes providing a semiconductor substrate, e.g., silicon wafer. The method forms a first dielectric layer overlying the semiconductor substrate and forms an aluminum layer overlying the dielectric layer. The aluminum layer has a predetermined roughness of greater than 20 Angstroms RMS. The method patterns the aluminum layer to expose portions of the dielectric layer. The method includes forming a second dielectric layer overlying the patterned aluminum layer and exposed portions of the dielectric layer. The method removes a portion of the second dielectric layer. The method processes regions overlying the patterned aluminum layer using a touch-up polishing process to reduce a surface roughness of the patterned aluminum to less than 5 Angstroms and eliminate the dielectric residue overlaying the patterned aluminum to form a mirror surface on the patterned aluminum.

Method and structure for aluminum chemical mechanical polishing

A method for manufacturing an LCOS device includes forming an interlayer dielectric layer overlying a surface region of a substrate. The interlayer dielectric layer is patterned to form a plurality of recessed regions. Each of the recessed regions corresponds to a pixel element for a LCOS device and is isolated by a portion of dielectric material defining a border for each of the recessed regions. An aluminum material or aluminum alloy material is deposited within each of the recessed regions. A photomask is formed overlying the aluminum material and patterned to expose the recessed regions while protecting the border regions. Exposed regions of the aluminum material is removed while the border regions with the photomask is protected. The method continues the removing until the aluminum material has been removed to a vicinity of an upper region of the border regions. The patterned photomask is stripped to expose protruding aluminum material.

Etch back with aluminum CMP for LCOS devices

A method for chemical mechanical polishing of mirror structures. The method includes providing a semiconductor substrate, e.g., silicon wafer. The method includes forming a first dielectric layer overlying the semiconductor substrate and forming an aluminum layer overlying the first dielectric layer, the aluminum layer having an upper surface with a predetermined roughness of greater than 20 Angstroms RMS. The method also includes processing regions overlying the upper surface of the aluminum layer using a touch polishing process to reduce a surface roughness of the upper surface of aluminum layer to less than 5 Angstroms to form a mirror surface on the aluminum layer. Preferably, a protective layer is formed overlying the mirror surface on the aluminum layer. The method includes patterning the aluminum layer to expose portions of the dielectric layer to form a plurality of pixel regions defined by borders from the exposed portions and forming a second dielectric layer overlying the patterned aluminum layer and exposed portions of the first dielectric layer. The method includes removing a portion of the second dielectric layer to expose the protective layer, whereupon the protective layer acts as a polish stop layer. In a specific embodiment, the selectivity between the protective layer and the second dielectric layer is 1:30 or greater.

Method and structure for aluminum chemical mechanical polishing and protective layer

Systems and methods are disclosed for polishing a semiconductor substrate having a polymer film surface deposited thereon by chemishearing the surface; and performing chemical mechanical polishing (CMP) on the chemisheared surface.

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Shanghai, China

Chris Chang Yu