Skhynix Inc.

Hynix Semiconductor Inc.

Sk Hyinx Inc.

Choung-Ki Song

Chang-Hyun Kim

Yo-Sep Lee

Jae-Seung Lee

Kie-Bong Ku

Sung-Hwa Ok

Hye-Young Lee

Young-Do Hur

Yong-Gu Kang

Se-Jin Yoo

Doo-Chan Lee

Tae-Woo Kwon

Sang-Sie Yoon

Han-Sub Shin

A semiconductor device includes a first control block suitable for selectively blocking a refresh command signal based on a period signal having a predetermined activating pattern and a predetermined mode signal activated in a predetermined mode to generate a refresh group signal; and a second control block suitable for controlling a refresh operation based on the refresh group signal.

Semiconductor device, semiconductor system with the semiconductor device and method of driving the semiconductor system capable of performing refresh operations in units of groups of semiconductor devices

A memory module includes an emergency power supplier, a plurality of ranks each including one or more volatile memories, a non-volatile memory, and a controller suitable for backing up data of the ranks into the non-volatile memory by using the emergency power supplier during a power failure, wherein the ranks are sequentially backed up, and while one rank is backed up among the ranks, the other ranks are controlled in a self-refresh mode.

Volatile memory, memory module including the same, and method for operating the memory module

A test setting circuit includes a first detection unit suitable for detecting whether a first code is sequentially inputted based on a first sequence, at each of first to Nth steps, where N is a natural number; a second detection unit suitable for sequentially receiving a second code through the first to Nth steps, and detecting whether the second code that is sequentially inputted through the first to Nth steps has a value corresponding to a second sequence; and a test setting unit suitable for setting a test mode when it is detected that the first code and the second code are inputted to satisfy the first sequence and the second sequence.

Test setting circuit, semiconductor device, and test setting method

A semiconductor device includes: a command decoding unit suitable for decoding external command signals to generate an internal command signal; and a pulse control unit suitable for controlling a pulse width of the internal command signal.

Semiconductor device and semiconductor system including the same

A memory includes a first cell array configured to include a plurality of first memory cells connected to a plurality of word lines, a second cell array configured to include a plurality of second memory cells connected to the plurality of word lines, wherein a group of the plurality of second memory cells which are connected to a corresponding word line stores the number of activations for the corresponding word line, and an activation number update unit configured to update a value stored in the corresponding group of the plurality of second memory cells connected to the activated word line of the plurality of word lines.

Memory for storing the number of activations of a wordline, and memory systems including the same

A semiconductor memory device includes a command buffering unit suitable for receiving and buffering a command signal based on an enable control signal, a fuse array suitable for programming data based on the command signal, and an enable control unit suitable for generating the enable control signal, wherein an activation operation on the command buffering unit by the enable control signal is controlled during a programming operation period of the fuse array.

Memory system for improving programming operation on fuse array

A semiconductor device includes an internal signal processing block suitable for generating an internal enable signal and an internal control signal that correspond to an external enable signal and an external control signal, and a monitoring unit suitable for outputting a monitoring signal that corresponds to a predetermined internal signal, based on the internal enable signal and the internal control signal, in an initial operation period.

Semiconductor device capable of monitoring internal signal and method for driving the same

A memory includes a plurality of word lines each of which are connected to one or more memory cells, an address detection unit suitable for detecting a target address of a target word line among the plurality of word lines, wherein the target word line has an activation history satisfying a predetermined condition, and a control unit suitable for activating one or more word line among the plurality of word lines each time a refresh command is applied, and activating one or more adjacent word lines in response to a refresh command after detection of the target address, wherein the adjacent word line is adjacent to the target word line and identified by the target address.

Memory and memory system including the same

An address detection circuit includes an address storage unit suitable for receiving an address when an active command is activated, and storing recently inputted N number of addresses; and an address determination unit suitable for determining whether an address currently inputted to the address storage unit is already inputted at least a threshold number of times in each period that the active command is activated M (1&#x2266;M&#x2266;N) number of times, based on the N number of addresses stored in the address storage unit.

Address detection circuit, memory system including the same

A memory device includes a memory cell array having a plurality of memory cells, a storage unit suitable for storing a fail address corresponding to a fail memory cell in the memory cell array, an available storage capacity determination unit suitable for generating available capacity information indicating an available storage capacity in the storage unit, and an output circuit suitable for outputting the available capacity information.

Memory device and memory system including the same, and operation method of memory device

A semiconductor memory device includes a first global line suitable for inputting/outputting data from/to a first bank, a second global line suitable for inputting/outputting data from/to a second bank, a multi-purpose register (MPR) suitable for loading data having a predetermined value on the first global line in a training mode, a first data input/output (I/O) unit suitable for inputting/outputting data between one of the first and second global lines and a first data pad and selectively transferring data loaded on the first global line to the second global line in response to a bandwidth option in the training mode, and a second data I/O unit enabled in response to the bandwidth option, suitable for inputting/outputting data between the second global line and a second data pad.

Semiconductor memory device

A memory module includes an emergency power supply block, a volatile memory, a nonvolatile memory, and a control block configured to control data of the volatile memory to be backed up in the nonvolatile memory, by using a power supplied from the emergency power supply block, upon a power failure, and control the data of the volatile memory to be recovered, by using data backed up in the nonvolatile memory, upon a power recovery, wherein the control block controls the data of the volatile memory not to be backed up while controlling the data of the volatile memory to be recovered, even upon the power failure.

Memory module and operation method thereof

A semiconductor system includes multiple semiconductor devices operating commonly in response to a command signal, wherein each of the multiple semiconductor devices is independently activated according to each of multiple data strobe signals respectively corresponding to the multiple semiconductor devices; and a controller suitable for providing the command signal and the multiple data strobe signals.

Semiconductor system and method of operating the same

A semiconductor device may include: a plurality of data pads; a plurality of data buffers each suitable for buffering a signal inputted through a first input node using a voltage inputted through a second input node, and outputting the buffered signal; and a calibration control unit suitable for generating a test signal in a calibration mode, adjusting the level of the test signal, receiving outputs of the plurality of data buffers while adjusting the level of the test signal, and adjusting offsets of the data buffers such that the logical values of the outputs of the data buffers transit when the test signal has a target level.

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Gyeonggi-do, South Korea

Choung-Ki Song