Mosel Vitelic Corporation

Mosel Inc.

Chou-Shin Jou

Tings Wang

Tsai-Sen Lin

Chung-Shih Tsai

Der-Tsyr Fan

Yi-Fu Chung

Jen-Chieh Chang

Chuan-Yi Wang

Bor-Shiun Wu

Der-Tgyr Fan

Lin Tsai-Sen

Chun-Pey Cho

Chin-Kang Li

Huei-Ping Hsieh

Embodiments of the present invention relate to a method of making an IC capacitor. In one embodiment, the method comprises providing a substrate, forming a polycide layer on the substrate, and forming an insulating amorphous silicon layer on the polycide layer. The insulating amorphous silicon layer serves as an anti-reflection layer. The method further comprises implanting n-type ions into the insulating amorphous silicon layer to transform the insulating amorphous silicon layer into a conductive amorphous silicon layer, and patterning the polycide layer and the conductive amorphous silicon layer to form a bottom electrode on the substrate. A dielectric layer is formed on the bottom electrode and the substrate, and a conductor layer is formed on the dielectric layer. The conductor layer is patterned to form a top electrode on the dielectric layer.

Method of making IC capacitor

The present invention relates to a monitor method for quality of metal Antireflection Coating (ARC) layer and, more particularly, to a fast and accurate monitor method for quality of metal ARC layer. By using of immersing a silicon wafer comprising an ARC layer into an acidic (such as a developer) or an alkalescent solution for about 200-300 seconds, according to the present invention, at weak points of the metal ARC layer there occur voids (defects) due to a Galvanic cell effect enhanced by these chemical solutions and then how many defects can be counted by a wafer defect inspector such as a KLA instrument so that quality of the metal ARC layer can be monitored by this defect number. Besides, Since the silicon wafer used as a sample for the wafer defect inspector simply comes from a production line, i.e. a developing process, rather than from other additional processing, said method allows for fast and accurately monitoring quality of the metal ARC layers.

Monitor method for quality of metal ARC (antireflection coating) layer

The present invention provides a method for controlling dopant density of a plug-shaped doped polysilicon layer formed within a plug-shaped recess to prevent the dopant contained in the plug-shaped doped polysilicon layer from diffusing into a conductive layer under the plug-shaped recess through a bottom side of the plug-shaped recess, the plug-shaped recess being formed within a dielectric layer which is positioned above the conductive layer, the method comprising: (1) forming an undoped silicon layer on the surface of the plug-shaped recess; (2) forming a doped polysilicon layer on top of the undoped silicon layer to fill the plug-shaped recess; and (3) performing a thermal treatment to the semiconductor wafer so as to make the doped poly-silicon layer interact with the undoped silicon layer inside the plug-shaped recess which forms a completely doped polysilicon layer within the plug-shaped recess.

Method for controlling dopant diffusion in a plug-shaped doped polysilicon layer on a semiconductor wafer

The present invention provides a method for evenly immersing a wafer in a solution held in a solution chamber, which comprises the following steps: (1) placing at least one disk-shaped wafer inside a wafer holder which is used for vertically holding at least one wafer, (2) immersing the wafer holder into the solution vertically so that each wafer in the wafer holder can be vertically immersed into and react with the solution, (3) vertically rotating the wafer holder in the solution so as to invert each wafer in the wafer holder upside down, and (4) removing the wafer holder from the solution vertically after immersing the wafer in the solution for a predetermined period of time.

Method for evenly immersing a wafer in a solution

The present invention provides a method for preventing corrosion of an aluminum-containing metallic layer having a plurality of trenches on the surface of a semiconductor chip caused by chlorine atoms residing on side walls of the trenches of the metallic layer after a trench etching process. The method comprises the following steps: (1) removing the photo resistance layer on top of the metallic layer by ashing at temperatures between 178.degree. C. and 200.degree. C. after a trench etching process, (2) using an acidic solution comprising hydroxylamine (NH.sub.2 OH), hydroquinone C.sub.6 H.sub.4 (OH).sub.2, monoethanolanine (HOCH.sub.2 CH.sub.2 NH.sub.2) and water to wash off residues on the surface of the semiconductor chip, and (3) heating the semiconductor chip for a predetermined time period at temperatures between 200.degree. C. and 250.degree. C. so as to completely dissipate the chlorine atoms resided on the side walls of the metallic layer for preventing recurrent corrosion of an aluminum-containing metallic layer.

Method for preventing corrosion of a metallic layer of a semiconductor

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Hsin-Chu, Taiwan

Chou-Shin Jou