Industrial Technology Research Institute

Delsolar Co., Ltd.

Chorng-Jye Huang

Chen-Hsun Du

Chao-Cheng Lin

Chun-Ming Yeh

Cheng-Ting Chen

Chen-Cheng Lin

Chun-Heng Chen

Lee-Ching Kuo

Jyi Tyan Yeh

Chien-Sheng Huang

Shih-Chen Lin

Leo C K Liau

Shih-Cheng Lin

Chien Sheng Huang

Wei-Chih Chang

Yi-Chin Chou

Feng-Cheng Jeng

Jui-Chung Hsiao

Pin-Sheng Wang

Chien-Kai Peng

Lee Ching Kuo

A solar cell includes a photoelectric conversion layer, a doped layer, a first passivation layer, a first TCO layer, a front electrode and a back electrode. The doped layer is disposed on the front surface of the photoelectric conversion layer. The first passivation layer is disposed on the doped layer, wherein the first passivation layer has a plurality of openings exposing a portion of the doped layer. The first TCO layer is disposed on the first passivation layer and in the openings, and directly contacts the exposed doped layer via the openings, wherein a ratio of an area of the openings to an area of the first TCO layer is between 0.01 and 0.5. The front electrode is disposed on the first TCO layer. The back electrode is disposed on the back surface of the photoelectric conversion layer.

Solar cell

A solar cell is provided. The solar cell includes a Si substrate having a first surface and a second surface opposite to each other, an emitter, a first electrode, a doped region, a passivation layer, a doped polysilicon layer, a semiconductor layer, and a second electrode. The emitter is disposed on the first surface. The first electrode is disposed on the emitter. The doped region is disposed in the second surface. The passivation layer is disposed on the second surface. The doped polysilicon layer is disposed on the passivation layer, wherein a plurality of holes penetrates the doped polysilicon layer and the passivation layer and exposes a portion of the second surface. The semiconductor layer is disposed on the doped polysilicon layer and in the holes. The band gap of the semiconductor layer is greater than that of the Si substrate. The second electrode is disposed on the semiconductor layer.

A solar cell having an improved structure of rear surface includes a p-type doped region, a dense metal layer, a loose metal layer, at least one bus bar opening, and solderable material on or within the bus bar opening. The solderable material contacts with the dense aluminum layer. The improved structure in rear surface increases the light converting efficiency, and provides a good adhesion between copper ribbon and solar cell layer thereby providing cost advantages and reducing the complexity in manufacturing. A solar module and solar system composed of such solar cell are also disclosed.

Solar cell, solar module and system and fabrication method thereof

A solar cell substrate with thin film polysilicon. The solar cell substrate includes a substrate; a transparent conductive layer, formed on the substrate; a thermal isolation layer having inlaid conductive layers, formed on the transparent conductive layer; and a polysilicon layer, formed on the thermal isolation layer.

Solar cell substrate with thin film polysilicon

This invention discloses a novel method for fabricating solar cells. Using the existing screen-printing, masking or photolithography techniques, a P-type or N-type diffusion source is coated on the sites of an N-type or P-type silicon wafer desired for forming electrodes. Then, a low dose P-type or N-type diffusion source is in situ diffused into the N-type or P-type silicon wafer together with the P-type or N-type diffusion source coated on the N-type or P-type silicon wafer in the furnace. Thereafter, a P,/P,or N,/N,diffusion region is formed within the N-type or P-type silicon wafer. Finally, electrodes aligned to the P,or N,diffusion region are formed by means of screen-printing. Then, a solar cell with high photocurrent and low series resistance can be obtained.

Method for fabricating solar cells

Growing community of inventors

Hsinchu, Taiwan

Chorng-Jye Huang