Harris Corporation

Intersil Americas Inc.

Intersil Corporation

Choong-Sun Rhee

Michael D Church

Kantilal Bacrania

Akira Ito

Jeffrey Michael Johnston

Glenn Alan DeJong

John T Gasner

Gregory J Fisher

Glenn A Dejong

Dave Kutchmarick

Jeffrey M Johnston

An integrated circuit has an isolation structure in the form of a double diode moat. The P substrate has P&plus; buried layers,and,on opposite sides of N&plus; buried layer,. Analog devices are formed behind one diode moat, digital CMOS devices are formed behind the other moat.

Analog-to-digital converter and method of fabrication

An integrated circuit has a pseudosubstrate 6060 with an isolation moat 9505. Substrate 6001 has one conductivity and a subcircuit region 6060 has an opposite conductivity. Digital CMOS devices are formed in the subcircuit over region 6060 and operate between zero to +5 volts. Analog devices are formed over the rest of the substrate and operate between plus and minus 5 volts. The moat 9505 isolates the digital CMOS devices from the analog devices.

A two-step analog-to-digital converter and BiCMOS fabrication method. The fabrication method provides pseudosubstrate isolation of digital CMOS devices from the analog devices. The converter uses NPN current switching in a flash analog-to-digital converter and in a digital-to-analog converter for low noise operation. CMOS digital error correction and BiCMOS output drivers provide high packing density plus large output load handling. Timing control aggregates switching events and puts them into intervals when noise sensitive operations are inactive. The fabrication method uses a thin epitaxial layer with limited thermal processing to provide NPN and PNP devices with large breakdown and Early voltages. Laser trimmed resistors provide small long term drift due to dopant stabilization in underlying BPSG and low hydrogen nitride passivation.

Analog-to-digital converter

Growing community of inventors

Palm Bay, FL, United States of America

Choong-Sun Rhee