Infineon Technologies Ag

Infineon Technologies Austria Ag

Tinfineon Technologies Austria Ag

Chooi Mei Chong

Ralf Otremba

Josef Hoeglauer

Klaus Schiess

Xaver Schloegel

Teck Sim Lee

Thomas Bemmerl

Michael Stadler

Lee Shuang Wang

Sanjay Kumar Murugan

Chee Voon Tan

Amirul Afiq Hud

Edward Myers

Gerhard Noebauer

Dominic Maier

Markus Dinkel

Juergen Schredl

Matthias Strassburg

Thomas Stoek

Stefan Macheiner

Josef Höglauer

Abdul Rahman Mohamed

Wee Boon Tay

Paul Armand Asentista Calo

Fong Lim

Wee Aun Jason Lim

Ting Soon Chin

Ying Pok Sam

Wei Hing Tan

Raynold Talavera Corocotchia

Ida Fischbach

A semiconductor device includes: a carrier having a die pad and a contact; a semiconductor die having opposing first and second main sides and being attached to the die pad by a first solder joint such that the second main side faces the die pad; and a contact clip having a first contact region and a second contact region. The first contact is attached to the first main side by a second solder joint. The second contact region is attached to the contact by a third solder joint. The first contact region has a convex shape facing towards the first main side such that a distance between the first main side and the first contact region increases from a base of the convex shape towards an edge of the first contact region. The base runs along a line that is substantially perpendicular to a longitudinal axis of the contact clip.

Semiconductor device having a contact clip with a contact region having a convex shape and method for fabricating thereof

A power semiconductor package includes a power semiconductor chip, an electrical connector arranged at a first side of the power semiconductor chip and having a first surface that is coupled to a power electrode of the power semiconductor chip, an encapsulation body at least partially encapsulating the power semiconductor chip and the electrical connector, and an electrical insulation layer arranged at a second surface of the electrical connector opposite the first surface, wherein parts of the encapsulation body and the electrical insulation layer form a coplanar surface of the power semiconductor package.

Power semiconductor package and method for fabricating a power semiconductor package

Semiconductor device and method for fabricating a semiconductor device

A package encloses a power semiconductor die that has a first load terminal at a die frontside facing a footprint side of the package and a second load terminal arranged at a die backside facing a top side of the package. The package also includes a lead frame configured to electrically and mechanically couple the package to a support. The lead frame has a planar first outside terminal electrically connected with the first load terminal and a planar second outside terminal electrically connected with the second load terminal. The planar first outside terminal is configured to interface with the support by means of a first contact area. The planar second outside terminal is configured to interface with the support by means of a second contact area. The second contact area has a size in a range between 80% and 120% of a size of the first contact area.

SMD package with flat contacts to prevent bottleneck

A semiconductor chip package includes a semiconductor chip disposed over a main surface of a carrier. An encapsulation body encapsulates the chip. First electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a first side face of the encapsulation body. Second electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a second side face of the encapsulation body opposite the first side face. A first group of the first electrical contact elements and a second group of the first electrical contact elements are spaced apart by a distance D that is greater than a distance P between adjacent first electrical contact elements of the first group and between adjacent first electrical contact elements of the second group. The distances D and P are measured between center axes of electrical contact elements.

Semiconductor chip package having a repeating footprint pattern

In some examples, a device includes a power supply element and a reference voltage element, wherein the reference voltage element is electrically isolated from the power supply element. The device further includes a high-side semiconductor die including at least two high-side transistors, wherein each high-side transistor of the at least two high-side transistors is electrically connected to the power supply element. The device also includes a low-side semiconductor die including at least two low-side transistors, wherein each low-side transistor of the at least two low-side transistors is electrically connected to the reference voltage element. The device includes at least two switching elements, wherein each switching element of the at least two switching elements is electrically connected to a respective high-side transistor of the at least two high-side transistors and to a respective low-side transistor of the at least two low-side transistors.

Semiconductor package for multiphase circuitry device

A semiconductor chip package includes a semiconductor chip, an encapsulation body encapsulating the semiconductor chip, a chip pad, and electrical contact elements connected with the semiconductor chip and extending outwardly. The encapsulation body has six side faces and the electrical contact elements extend exclusively through two opposing side faces which have the smallest surface areas from all the side faces. The semiconductor chip is disposed on the chip pad, and a main face of the chip pad remote from the semiconductor chip is at least partially exposed to the outside.

Semiconductor chip package having contact pins at short side edges

An electronic device comprising a first substrate, a second substrate, a first semiconductor chip comprising a transistor, comprising a first mounting surface bonded to the first substrate and comprising a second mounting surface bonded to the second substrate, and a second semiconductor chip comprising a first mounting surface bonded to the first substrate and comprising a second mounting surface bonded to the second substrate, wherein the first semiconductor chip comprises a via electrically coupling a first transistor terminal at its first mounting surface with a second transistor terminal at its second mounting surface.

Transistor arrangement with semiconductor chips between two substrates

A semiconductor device includes a first semiconductor power chip mounted over a first carrier and a second semiconductor power chip mounted over a second carrier. The semiconductor device further includes a contact clip mounted over the first semiconductor power chip and on the second semiconductor power chip. A semiconductor logic chip is mounted over the contact clip.

Multi-chip semiconductor power device

In an embodiment, an electronic component includes a dielectric layer, a semiconductor device embedded in the dielectric layer, an electrically conductive substrate, a redistribution layer having a first surface and a second surface providing at least one outer contact, and a first electrically conductive member. The semiconductor device has a first surface including at least one first contact pad and a second surface including at least one second contact pad. The second contact pad is mounted on the electrically conductive substrate. The first electrically conductive member includes at least one stud bump and extends between the electrically conductive substrate and the first surface of the redistribution layer.

Electronic component

A semiconductor package includes a semiconductor die having a first electrode at a first side and a second electrode at a second side opposing the first side, a first lead under the semiconductor die and connected to the first electrode at a first level of the package, and a second lead having a height greater than the first lead and terminating at a second level in the package above the first level, the second level corresponding to a height of the semiconductor die. A connector of a single continuous planar construction over the semiconductor die and the second lead is connected to both the second electrode and the second lead at the same second level of the package.

Multi-level semiconductor package

A method includes providing a semiconductor chip having a first main surface and a second main surface. A semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. A first layer of solder material is provided between the first main surface and the carrier. A contact clip including a first contact area is placed on the semiconductor chip with the first contact area facing the second main surface of the semiconductor chip. A second layer of solder material is provided between the first contact area and the second main surface. Thereafter, heat is applied to the first and second layers of solder material to form diffusion solder bonds between the carrier, the semiconductor chip and the contact clip.

Semiconductor device using diffusion soldering

A chip package is provided. The chip package includes a chip carrier, a voltage supply lead, a sensing terminal and a chip disposed over the chip carrier. The chip includes a first terminal and a second terminal, wherein the first terminal electrically contacts the chip carrier. The chip package also includes an electrically conductive element formed over the second terminal, the electrically conductive element electrically coupling the second terminal to the voltage supply lead and the sensing terminal.

Chip arrangements, a chip package and a method for manufacturing a chip arrangement

Semiconductor packages and method of fabricating them are described. In one embodiment, the semiconductor package includes a substrate having a first and a second die attach pad. A first die is disposed over the first die attach pad. A second die is disposed over the second die attach pad. A third die is disposed between the first and the second die. The third die having a first, a second, and a third portion such that the first portion is disposed above a portion of the first die, the second portion is disposed above a portion of the second die, and the third portion is disposed above an area between the first die and the second die.

Growing community of inventors

Melaka, Malaysia

Chooi Mei Chong