Nexus Photonics LLC

Hewlett Packard Enterprise Development LP

Chong Zhang

Minh Tran

Tin Komljenovic

Raymond G Beausoleil

Di Liang

Geza Kurczveil

Hyun Dai Park

Zhihong Huang

Hyundai Park

Xiaoge Zeng

David Kielpinski

Bassem Tossoun

Zeyu Zhang

A device includes a first element having a passive waveguide structure supporting a first optical mode, a second element providing heat spreading functionality, a third element thermally coupled to the second element, having an active waveguide structure supporting a second optical mode, and a fourth element, at least partly butt-coupled to the third element, having an intermediate waveguide structure supporting intermediate optical modes. A tapered waveguide structure in either one of the first and fourth elements facilitates efficient adiabatic transformation between the first optical mode and one of the intermediate optical modes. No adiabatic transformation occurs between any of the intermediate optical modes and the second optical mode. Mutual alignments of the first, second, third and fourth elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, second, third and fourth elements.

Heterogeneously integrated photonic platform with improved thermal performance

A device has first, second and third elements fabricated on a common substrate. The first element supports a first optical mode in an active waveguide structure characterized by a mesa. The second element supports a second optical mode in a passive waveguide structure. The third element, at least partly butt-coupled to the first element, supports an intermediate optical mode in an intermediate waveguide structure characterized by a waveguide core cross section including a shallow step. A tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the second optical mode and the intermediate optical mode. No adiabatic transformation occurs between the intermediate optical mode and the first optical mode. Lithographic alignment marks facilitate precise alignment of the three elements during device fabrication.

Mode control in heterogeneously integrated photonics

A device comprises first, second, third and fourth elements fabricated on a common substrate. The first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure supporting a second optical mode, the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting intermediate optical modes, and a fourth element comprising TCO material that is attached to the first element. If the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation. No adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode. Mutual alignments of the first, the second, the third, and the fourth elements are defined using lithographic alignment marks.

Heterogeneous GaN lasers and active components

A device comprises first, second and third elements fabricated on a common substrate. The first element comprises an active waveguide structure comprising electrically pumped optical source supporting a first optical mode. The second element comprises a passive waveguide structure supporting a second optical mode in at least part of the second element. The third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting intermediate optical modes. At least part of the second element supports at least one optical mode that interacts with rare-earth dopants. A tapered waveguide structure in at least one of the second and the third elements facilitates efficient adiabatic transformation between the second optical mode and at least one of the intermediate optical modes. No adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode. Mutual alignments of the elements are defined using lithographic alignment marks.

Heterogeneous photonic integrated circuits with doped waveguides

A device includes three elements fabricated on a common substrate. The first element includes an active waveguide structure having at least three sub-layers supporting a first optical mode. The second element has a passive waveguide structure supporting a second optical mode, and the third element, butt-coupled to the first element, has an intermediate waveguide structure supporting intermediate optical modes. One sub-layer in the active waveguide structure includes an n-contact layer, another sub-layer includes a p-contact layer, and a third sub-layer includes an active region. A tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the second optical mode and an intermediate optical mode. No adiabatic transformation occurs between that intermediate optical mode and the first optical mode. Mutual alignments of the three elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed fabrication of the elements.

Integrated GaAs active devices with improved optical coupling to dielectric waveguides

A device providing efficient transformation between an initial optical mode and a second optical mode includes first, second and third elements fabricated on a common substrate. The first element includes first and second active sub-layers supporting initial and final optical modes with efficient mode transformation therebetween. The second element includes a passive waveguide structure supporting a second optical mode. The third element, at least partly butt-coupled to the first element, includes an intermediate waveguide structure supporting an intermediate optical mode. If the final optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in the second or third elements facilitates efficient transformation between the intermediate optical mode and the second optical mode. Precise alignment of sub-elements formed in one of the elements, relative to sub-elements formed in another one of the elements, is defined using lithographic alignment marks.

Active-passive photonic integrated circuit platform

An optical device comprises first, second and third elements fabricated on a common substrate. The first element comprises an active waveguide structure supporting a first optical mode, the second element, fabricated on a planarized top surface of the first element, comprises a passive waveguide structure supporting a second optical mode, and the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure, positioned such that a top surface of the intermediate structure underlies a bottom surface of the passive waveguide structure. If the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the first optical mode and the second optical mode. Mutual alignments of the first, second and third elements are defined using lithographic alignment marks.

Heterogeneously integrated photonic devices with improved optical coupling between waveguides

A device comprises first, second and third elements fabricated on a common substrate. The first element comprises an active waveguide structure comprising: one portion, of effective cross-sectional area A, supporting a first optical mode; and a second portion, butt-coupled to the first portion, of effective cross-sectional area A&#x3e;A. The second element comprises a passive waveguide structure supporting a second optical mode. The third element, at least partly butt-coupled to the second portion, comprises an intermediate waveguide structure supporting intermediate optical modes. If the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the first optical mode and one intermediate optical mode. No adiabatic transformation occurs between any intermediate optical mode and the first optical mode. Mutual alignments of the elements are defined using lithographic marks.

Integrated active devices with enhanced optical coupling to dielectric waveguides

A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.

Quantum-dot-based avalanche photodiodes on silicon

A quantum dot comb laser includes a body defining a lasing cavity and an extension defining an external cavity, the FSR of the lasing cavity being an inverse of an integer multiple of the FSR of the external cavity.

Quantum dot comb lasers with external cavity

A laser includes a traveling wave laser cavity with an active section, a pulse stretcher, and a pulse compressor. The pulse stretcher is coupled to the waveguide before the active section and the pulse compressor is coupled to the waveguide after the active section.

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Santa Barbara, CA, United States of America

Chong Zhang