Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Semiconductor Manufacturing (shanghai) International Corporation

Semiconductor Manufacturing (beijing) International Corporation

Other

Dupont Electronics, Inc.

Shanghai Chule (cootek) Information Technology Co., Ltd.

Shanghai Fusion Tech Co., Ltd.

Chong Wang

Xuanjie Liu

Haifang Zhang

Tzu Yin Chiu

Tao Yang

Kan Zhang

Wei He

Jianzhe Li

Ping Wang

Hua Feng

Jinjing Zhang

Xuan Jie Liu

Chao Yuan

Xiaohui Li

Xin Liang

Hai Fang Zhang

Haiyan Lu

Hongjun Liu

Zhiqiang Zheng

Da Liang Ju

Zheyue Yang

Wei Mai

Sheng Zhu

Ze Tan

Siping Huang

Yilang Zhou

Three-way catalytic converters and devices for processing tail gases are disclosed. In some embodiments, a three-way catalytic converter includes a cylindrical housing, a three-way catalytic assembly provided in the cylindrical housing, a tail gas inlet and a tail gas outlet provided at the top of the cylindrical housing and communicated with the cylindrical housing, and a heater circumferentially wrapped around the outer side wall of the cylindrical housing. The three-way catalytic assembly is heated by energizing the heater. In other embodiments, a first cavity is formed between the three-way catalytic assembly and one end of the cylindrical housing, a second cavity is formed between the three-way catalytic assembly and another end of the cylindrical housing, the tail gas inlet is connected with the first cavity, and the tail gas outlet is connected with the second cavity.

Three-way catalytic converter and device for processing tail gas

The present invention discloses heat sinks comprising a base and a plurality of fins protruding from one surface of the base, wherein the base and the fins are independently composed of one or more anisotropic thermal conductive films. Said anisotropic thermal conductive film is electric insulative with low Dk and Df values. Also disclosed are methods for manufacturing the heat sinks and methods for dissipating heat of electronic devices having at least one heat generating component.

Heat sink for electronic devices

The present disclosure relates to the technical field of semiconductors, and discloses an image sensor and a manufacturing method therefor. The image sensor includes: a semiconductor substrate; a first active region located on the semiconductor substrate; a doped semiconductor layer located on the first active region; and a contact located on the semiconductor layer, where the first active region includes: a first doped region and a second doped region abutting against the first doped region, wherein the second doped region is located at an upper surface of the first active region, and wherein the second doped region is formed by dopants in the semiconductor layer that are annealed to be diffused to a surface layer of the first doped region. The present disclosure may reduce leakage current and improve device performances.

Image sensor and manufacturing method therefor

The present disclosure relates to the technical field of semiconductors, and discloses an image sensor and a manufacturing method therefor. The method includes: providing a semiconductor structure, where the semiconductor structure includes: a semiconductor substrate, and a first active region located on the semiconductor substrate, the first active region including a first doped region and a second doped region abutting against the first doped region, and the second doped region being located at an upper surface of the first active region; forming a semiconductor layer on an upper surface of the second doped region; and forming a contact connected to the semiconductor layer. The present disclosure enables defects or damages caused when forming the contact to be kept away from a junction field formed by the second doped region and the first doped region. Therefore, leakage current may be reduced and device performances may be improved.

Image sensor including doped regions and manufacturing method therefor

The present disclosure provides a process of clean production of electronic grade high-purity copper oxide. The process includes (1) preparing a carbon-ammonia system solution with a certain ratio of CO, NHand HO; (2) dissolving copper under a slightly negative pressure and at a system temperature less than or equal to 60&#xb0; C.; the reaction ends until the concentration of copper in the carbon-ammonia system solution reaches 80 to 140 g/L; (3) adding sodium polyacrylate; the reaction solution is heated to 60-80&#xb0; C. under a reduced pressure for deamination; (4) disposing basic copper carbonate to separate the solid from the liquid by a centrifuge to give an filter cake and copper-containing clear solution; (5) calcining the filter cake at 250-600&#xb0; C. for 1-5 hours to give an electronic grade high purity copper oxide; ammonia collected in step (3), the copper-containing clear solution collected in step (4), and carbon dioxide and water vapor collected in step (5) are transferred to the solution-preparing device of step (1) and directly used as raw materials for preparing carbonate-ammonia system solution, wherein the copper-containing clear solution is used as water. The process of production of the disclosure has a shortened processing line and a low energy consumption; it is not only cost saving but also can achieve goals of energy saving, reduced emission and environment pollution.

Process of clean production of electronic grade high-purity copper oxide

System and method for information service platform interaction are disclosed. The method may include obtaining, through a user interface of a mobile device, an input sequence from a user. The method may also include determining at least one business object based on the input sequence. The input sequence may at least partially match an identifier of the at least one business object. The method may also include obtaining user data based on the at least one business object or based on user identification information. The method may further include determining a menu of an information service platform provided by the at least one business object based on the user data. The method may further include displaying the menu according to a designated display mode on a display of the mobile device.

Information interactive platform, system and method

A capacitor, an image sensor circuit and fabricating methods are provided. The method includes providing a base substrate including a trench region and a body region adjacent to the trench region. The method also includes forming a first trench structure and a second trench structure on the first trench structure, in the base substrate in the trench region. In addition, the method includes forming a dielectric layer on a sidewall surface and a bottom surface of the first trench structure and an electrode layer on the dielectric layer in the first trench structure. Further, the method includes forming an isolation layer filling the second trench structure.

Capacitor, image sensor circuit and fabrication methods thereof

A packaging structure and a packaging method are provided. The packaging structure includes a carrier semiconductor structure including a carrier substrate, a carrier dielectric layer, and a carrier top conductive layer inside the carrier dielectric layer and having a top exposed by the carrier dielectric layer. The packaging structure also includes a top semiconductor structure including a top substrate, a first dielectric layer, a zeroth conductive layer, and a second dielectric layer, wherein a position of the zeroth conductive layer corresponds to a position of the carrier top conductive layer. Further, the packaging structure includes a conductive plug formed on one side of the zeroth conductive layer, and penetrating through the top substrate, the first dielectric layer, and the second dielectric layer, wherein the conductive plug is electrically connected to each of the zeroth conductive layer and the carrier top conductive layer.

Packaging structure including interconnecs and packaging method thereof

Growing community of inventors

Shanghai, China

Chong Wang