Sandisk Semiconductor (shanghai) Co. Ltd.

Western Digital Technologies, Inc.

Chong Un Tan

Chee Keong Chin

Junrong Yan

Kim Lee Bock

Li Ping Wang

Xu Wang

Shrikar Bhagath

Peng Lu

Hui Xu

Xin Hua Tian

Weili Wang

Ming Wu

Ling Yang

Shuai Wu

Hang Zhang

Seanan Wang

A semiconductor assembly includes a first die and a second die. The semiconductor assembly also includes a film on die (FOD) layer configured to attach the first die to the second die. The FOD layer is disposed on a first surface of the first die. The FOD layer includes a first portion comprising a first die attach film (DAF) disposed on an inner region of the first surface. The FOD layer also includes a second portion that includes a second DAF disposed on a peripheral region of the first surface surrounding the inner region. The second DAF includes a different material than the first DAF.

Non-cure and cure hybrid film-on-die for embedded controller die

A semiconductor die is disclosed including corner recesses to prevent cracking of the semiconductor die during fabrication. Prior to dicing the semiconductor die from the wafer, recesses may be formed in the wafer at corners between any pair of semiconductor die. The recesses may be formed by a laser or photolithographic processes in the kerf area between semiconductor die. Once formed, the corner recesses prevent cracking and damage to semiconductor die which could otherwise occur at the corners of adjacent semiconductor die as the adjacent semiconductor die move relative to each other during the backgrind process.

Semiconductor device including corner recess

A semiconductor device with die tilt control is disclosed. In one embodiment, a semiconductor device is provided comprising: a substrate; a first semiconductor die stacked on the substrate; and a plurality of additional semiconductor dies stacked on the first semiconductor die, wherein the plurality of additional semiconductor dies are stacked in an offset configuration, such that an edge of each of the plurality of additional semiconductor dies overhangs an edge of the semiconductor die on which it is stacked; wherein a thickness of a top-most semiconductor die of the plurality of additional semiconductor dies is greater than a thickness of any of the other additional semiconductor dies. Other embodiments are provided.

Semiconductor device with die tilt control

A semiconductor device is disclosed that is formed with die bond pads at an edge of the semiconductor die. The die bond pads may be formed partially in a kerf area between semiconductor die on a wafer. When the wafer is diced, the die bond pads are severed along their length, leaving a portion of the die bond pads exposed at an edge of the diced semiconductor die. Having die bond pads at the edge of the die minimizes the offset between die when stacked into a package.

Semiconductor device including die bond pads at a die edge

Growing community of inventors

Shanghai, China

Chong Un Tan