Samsung Electronics Co., Ltd.

Industry-University Cooperation Foundation Hanyang University

Battery Solution

Chong-seung Yoon

Young-Ho Kim

Jae-Ho Kim

Tae-Whan Kim

Yang-Kook Sun

Jae-Hun Jung

Yoon Ho Chung

Sung-Keun Lim

Mun-Seop Song

Hyoung-Jun Jeon

Hwan-Pil Park

Jea-hun Jung

Provided is a positive active material in which a compound containing lithium, a transition metal, and oxygen is doped with a doping metal, the positive active material including lithium (Li) layers, in which the lithium layers may include a first lithium layer including only lithium and a second lithium layer in which at least a part of the lithium of the first lithium layer is substituted with a transition metal.

Positive active material, method of preparing the same, and lithium secondary battery including the same

In one aspect, a charge trap flash memory device is provided which includes a semiconductor substrate, source and drain regions which are spaced apart in an active region of the semiconductor substrate to define a channel region therebetween, a tunneling dielectric layer located on the channel region, an organic polymer thin film located on the tunneling dielectric layer, metal or metal oxide nano-crystals embedded in the organic polymer thin film, and a gate located on the organic polymer thin film.

Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof

A flash memory device with a nanoscale floating gate and a method of manufacturing thereof are disclosed. At least one embodiment of the present invention provides a much simpler and easier method of manufacturing nanocrystals (or nanocrystallines) for the flash memory device than the conventional method. Since the nanocrystals are homogeneously dispersed as a polymer layer without agglomeration, size and density of the nanoparticles may be controlled. Additionally, one embodiment of the present invention provides memory devices with nanoscale floating gates, and related methods of manufacture, of high efficiency and cost effectiveness by employing electrically and chemically more stable nanoscale floating gates compared to conventional ones.

Flash memory device utilizing nanocrystals embedded in polymer

Disclosed herein is a method for forming quantum dots, comprising the steps of (a) depositing a metal thin layer onto a substrate, (b) coating a dielectric precursor onto the metal thin layer, and (c) stepwisely heating the resultant substrate; or a method for forming quantum dots, comprising the steps of (a) mixing a dielectric precursor diluted in a solvent and a metal powder and stirring the mixture, (b) coating the mixture onto a substrate, and (c) heating the resultant substrate. The method can easily control the size, density and uniformity of metal oxide quantum dots.

Method for forming quantum dots using metal thin film or metal powder

Growing community of inventors

Seoul, South Korea

Chong-seung Yoon