Hefei Core Storage Electronic Limited

Chong Peng

Qi-Ao Zhu

Hao-Zhi Lee

Wan-Jun Hong

Hui Xie

Zhi Wang

Tsung-Lin Wu

Jian Hu

A data storing method, a memory storage device, and a memory controller are provided. The method includes: obtaining a plurality of program/erase counts and a plurality of program/erase period values of a plurality of physical erasing units in a storage area; calculating a plurality of data cold and hot degrees according to the plurality of program/erase counts and the plurality of program/erase period values; selecting a first physical erasing unit according to the plurality of data cold and hot degrees, and selecting a second physical erasing unit according to the plurality of data cold and hot degrees; and writing data stored in the first physical erasing unit to the second physical erasing unit.

Data storing method, memory storage device and memory controller

A memory management method for a memory storage device is provided. The memory management method includes: detecting effective information of at least one operation event performed by the memory storage device in a first mode; and adjusting a threshold value according to the effective information. The threshold value is configured to determine whether to instruct the memory storage device to enter the first mode.

Memory management method, memory storage device and memory control circuit unit

A memory management method, a memory control circuit unit and a memory storage apparatus are provided. The method includes: recording a valid count of each physical erasing unit in a plurality of physical erasing units; sequentially arranging M physical erasing units corresponding to each of chip enable groups according to the valid count to form a plurality of sorted physical erasing units; remapping the physical erasing units corresponding to M virtual blocks according to the plurality of sorted physical erasing units; calculating a total number of valid counts of the remapped M virtual blocks, and sequentially arranging the remapped M virtual blocks according to the total number of valid counts to form a plurality of sorted virtual blocks; and sequentially extracting at least one of the sorted virtual blocks as a source virtual block to perform a garbage collection operation.

Memory management method, memory control circuit unit and memory storage apparatus

A mapping table management method, a memory control circuit unit, and a memory storage device are provided. The method includes: receiving a read command from a host system, wherein the read command indicates reading a first data stored in at least one first logical address; and searching whether a relation management information reflects that a first group static mapping table recording the first logical address is related to a dynamic mapping table. In response to a search result reflecting that the first group static mapping table is related to the dynamic mapping table, the dynamic mapping table is searched to obtain a first physical address mapped by the first logical address. And if not related, the first group static mapping table among group static mapping tables is searched to obtain a second physical address mapped by the first logical address.

Mapping table management method, memory control circuit unit and memory storage device

A data arranging method, a memory control circuit unit and a memory storage device for flash memory are provided. The method can be applied to a flash memory with a three-dimensional (3D) structure, an embedded memory device, or a solid-state hard disk. The method includes: writing at least one piece of data to at least one second physical erasing unit of at least one first physical erasing unit, and obtaining a distribution state of valid data in a plurality of physical erasing units; adjusting a specific threshold value according to the distribution state; and when the number of the at least one first physical erasing unit is less than the specific threshold value, performing a valid data merging operation.

Data arranging method, memory control circuit unit and memory storage device for flash memory for improving the performance of valid data merging operation

A mapping table updating method, a memory control circuit unit and a memory storage device. The method includes: receiving a first data corresponding to a first logical address from a host system; loading a first logical address-physical address mapping table according to the first logical address; sending a command sequence to a rewritable non-volatile memory module; in the process of writing the first data into a first physical programming unit according to the command sequence by a control circuit of the rewritable non-volatile memory module, updating the first logical address-physical address mapping table; and after writing the first data into the first physical programming unit by the control circuit, storing the updated first logical address-physical address table back to the rewritable non-volatile memory module.

Mapping table updating method, memory control circuit unit and memory storage device

The present invention relates to a memory management method, memory control circuit unit, and a memory storage device. The method includes: transmitting temporary data from a buffer memory to a register of a first memory plane; releasing a first storage space of the buffer memory, wherein the first storage space is configured to store the temporary data; performing a first operation to a second memory plane by using the first storage space; and after finishing the first operation performed on the second memory plane, reloading the temporary data from the register of the first memory plane to the first storage space of the buffer memory, wherein operations performed on the first memory plane and the second memory plane are asynchronous operations.

Memory management method for buffer memory, and memory control circuit unit and memory storage device using the same

A mapping table loading method and a memory storage apparatus are provided. The method includes: receiving a plurality of first read commands comprising a plurality of first logical units; executing a first logical-physical mapping table pre-loading operation to read a plurality of mapping information corresponding to the first logical units in a logical-physical mapping table from a rewritable non-volatile memory module to a first buffer area of a buffer memory according to a first executing sequence of the first read commands if the first logical units are not continuous logical addresses; and reading data belonging to the first logical units from physical erasing units to the first buffer area according to the mapping information of the first logical units, and replacing the mapping information of the first logical units in the first buffer area by the data belonging to the first logical units.

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Province, China

Chong Peng