Anaren, Inc.

Ttm Technologies Inc.

Chong Mei

Omar Eldaiki

Michael Len

Hans Peter Ostergaard

Bo Jensen

Ying Huang

Michael Lugert

Brian E Culliton

Samir Tozin

Brian K Buyea

Halid Mustacoglu

Raj Kumar

Hans P Ostergaard

David Senior

Michael J Len

A wideband termination circuit layout is provided for high power applications. The circuit layout may include a dielectric layer having a first surface and a second surface. The circuit layout may also include an input port disposed over the first surface. The circuit layout may further include at least two resistive film patches disposed over the first surface of the dielectric layer and a tuning line between the at least two resistive films disposed over the first surface of the dielectric layer. The at least two resistive film patches are connected in series with the at least one tuning line.

Wideband termination for high power applications

A directional coupler may include a first coupled section comprising a first and a second coupled transmission lines, the first coupled transmission line having a first end coupled to an input port. The directional coupler may also include a second coupled section comprising a first and a second coupled transmission lines. The directional coupler may also include a third coupled section comprising a first and a second coupled transmission lines. The first coupled transmission line of the third coupled section has a first end coupled to a second end of the second coupled transmission line of the second coupled section and a second end coupled to an output port. The directional coupler may further include a delay section. A total electrical length of the first coupled section, the second coupled section, the third coupled section, and the delay section is about 90 degrees.

Directional couplers with DC insulated input and output ports

A method is provided for forming a printed circuit board (PCB) assembly. The method may include drilling a first plurality of vias having a first diameter in a PCB and filling the first plurality of vias to form a first plurality of plated or filled vias. The method may also include drilling a second plurality of vias having a second diameter in the PCB, and filling the second plurality of vias to form a second plurality of plated or filled vias. The first plurality of plated or filled vias is mixed with the second plurality of plated or filled vias such that the spacing between the first plurality of plated or filled vias and the second plurality of plated or filled vias is less than the first diameter and the second diameter.

Methods for fabricating printed circuit board assemblies with high density via array

The present invention is directed to an impedance matching network for use at a predetermined frequency. The network includes: a low impedance port having a first impedance substantially equal to an impedance of an RF amplifier port; a first distributive transmission line network coupled to the low impedance port, the first distributive transmission line network including a plurality of first transmission lines, each first transmission line being characterized by a first characteristic impedance and a first electric line length at the predetermined frequency to form a first quasi-lumped reactive element so that the plurality of first transmission lines form a first quasi-lumped element impedance matching stage; at least one second distributive transmission line network coupled to the first distributive transmission line network and a high impedance port, the second distributive transmission line network including a plurality of second transmission lines, each second transmission line being characterized by a second characteristic impedance and a second electric line length at the predetermined frequency to form a second quasi-lumped reactive element so that the plurality of second transmission lines form at least one second quasi-lumped element impedance matching stage; and a high impedance port coupled to the at least one second quasi-lumped element impedance matching stage, the high impedance port having a second impedance substantially equal to a system impedance.

Impedance matching component

A power divider capable of implementation in a compact multilayer surface mount component to perform power division/combining with low insertion loss, wide bandwidth, design flexibility and high power handling capabilities. The power divider has a first pair of coupled transmission lines interconnecting the input to the outputs, a second pair of coupled transmission lines interconnecting the output ports to grounded isolation resistors, and a single transmission line interconnecting the second pair of coupled transmission lines. The surface mount implementation is by a first layer supporting the ports, a second layer providing edge coupled lines, a third layer having ground plane, a fourth layer and a fifth layer each supporting one of a pair of broadside coupled lines, a sixth layer with another ground plane, and a seventh layer including a single line interconnecting the broadside coupled lines.

Wideband gysel power divider

The present invention is directed to an RF termination device that includes a substrate having a first meandered transmission line disposed on a first surface thereof. The meandered first transmission line has a predetermined first transmission line length and a characteristic impedance substantially equal to twice the predetermined system impedance. One end of the first meandered transmission line is configured as an open circuit. A second meandered transmission line is disposed on the first major surface adjacent the first meandered transmission line. The meandered second transmission line has a predetermined second transmission line length and a characteristic impedance substantially equal to twice the predetermined system impedance. One end of the second meandered transmission line is coupled to the other end of the first transmission line and the other end is coupled to ground.

RF termination

A device includes a thermally conductive and electrically insulative substrate having a first major surface and a second major surface. A coupling structure is configured to reduce the RF input signal by substantially a predetermined amount of attenuation power. A tuning circuit is characterized by a tuning reactance substantially matched to a predetermined system impedance. A resistor is disposed on a majority of the first major surface and is characterized by a parasitic capacitance that is substantially negated by the tuning reactance. The resistor includes a first resistive portion and a second resistive portion; each of the first resistive portion and the second resistive portion being configured to direct approximately one-half of the attenuation power to the ground portion.

RF attenuator device and system

An RF device includes an impedance transformation circuit having a plurality of first RF couplers. Each first RF coupler includes a first portion of a first transmission line winding disposed on at least one first printed circuit board (PCB) and is configured to be electromagnetically coupled to a first portion of a second transmission line winding disposed on at least one second printed circuit board (PCB). The RF device also includes a balun circuit includes a plurality of second RF couplers coupled to balanced port connections, each second RF coupler including a second portion of the first transmission line winding wound around the first portion of a first transmission line winding and configured to be electromagnetically coupled to a second portion of the second transmission line winding wound around the first portion of a second transmission line winding.

Wideband RF device

A self-cascadable phase shifter having a two corresponding pairs of input and output pins. Each pair of input and output pins are interconnected by phase delay circuitry that is isolated from phase delay circuitry interconnecting the other pair of input and output pins so that each pair of input and output pins produces, for example, a 90 degree phase shift. The resulting phase shifter can be used to produce a 90 degree by using one pair of input and output pins or cascading both pairs of input and output pins to provide a 180 degree delay.

Self-cascadable phase shifter

The present invention is directed to an RF device that includes a laminate structure having a ceramic layer having a predetermined thermal conductivity that is a function of a predetermined RF device operating temperature. The ceramic layer forms a first major surface of the laminate structure and a second major ceramic surface is bonded to a layer of thermoplastic material that is, in turn, bonded to a conductive layer. The thermoplastic material has a coefficient of thermal expansion that substantially matches the conductive layer. A first circuit arrangement is disposed on the first major surface of the laminate structure and it includes a first RF circuit structure having a predetermined geometry and predetermined electrical characteristics. The laminate structure is configured to dissipate thermal energy generated by the at least one first RF circuit structure via substantially the entire second major surface of the laminate structure.

Stress relieved high power RF circuit

The present invention is directed to a hybrid coupler device that includes a first transmission line structure and a second transmission line structure. The first transmission line structure is interdigitally coupled with the second transmission line structure such that each transmission line in the second transmission line structure is disposed adjacent to a transmission line in the first transmission line structure. The coupling or the mutual capacitance Cbetween the transmission lines of the present invention need not be equal; in fact, they all can be different.

Hybrid coupler device having plural transmission line structures with unwound-rewound geometry

The present invention is directed to a network that includes an output matching network coupled to an amplifier. The output matching network is configured to transform the at least one amplifier transistor output impedance to an output matching network impedance. A combiner network is coupled to the output matching network. The combiner network includes a first quarter wavelength transmission line coupled between the in-phase signal path and a combiner node. The combiner network further includes a bandwidth enhancement element coupled to the quadrature signal path at the combiner node and an impedance transformation element coupled between the combiner node and a load. The impedance transformation element is configured to substantially transform a combined output matching network impedance at the combiner node to the load impedance.

Doherty power amplifier network

The present invention is directed to an impedance transformation device for use in a system having a characteristic system impedance, the device being characterized by a predetermined bandwidth having a center frequency. The device housing size is one-eighth wavelength of the center frequency. A first coupler is characterized by an even mode impedance and an odd mode impedance. The bandwidth is a function of the even mode impedance and the odd mode impedance substantially corresponds to the component port impedance. At least one second coupler is disposed in parallel with the first coupler and is characterized by the even mode impedance and the odd mode impedance.

Compact broadband impedance transformer

The present invention is directed to an RF device that includes a ceramic layer characterized by a ceramic layer dielectric constant and includes an RF circuit arrangement having a predetermined geometry and predetermined electrical characteristics. The ceramic layer dissipates thermal energy generated by the RF circuit via substantially the entire ceramic surface area. A first dielectric layer comprises a thermoplastic material and has a predetermined first thickness and a first dielectric constant. The predetermined electrical characteristics of the RF circuit arrangement are a function of the ceramic layer dielectric constant. A relative softness of the thermoplastic material is a function of the RF device operating temperature.

Growing community of inventors

Jamesville, NY, United States of America

Chong Mei