Applied Materials, Inc.

Chong Jiang

Byung-Sung Kwak

Daoying Song

Joseph Grover Gordon, Ii

Lizhong Sun

Michael D Armacost

Malcolm Emil Delaney

Jan Isidorsson

Yu Lei

Adolph Miller Allen

Michael Johnson

Jimmy Iskandar

Xuesong Lu

Hyman W H Lam

Yufei Hu

Lei Jing

Anthony Chih-Tung Chan

Bradley D Schulze

Pallavi Zhang

Byung Sung Leo Kwak

Anup Phatak

Mingte Liu

Byung-sung Leo Kwak

A method includes receiving a plurality of sets of sensor data associated with a processing chamber of a substrate processing system. Each of the plurality of sets of sensor data comprises a corresponding sensor value of the processing chamber mapped to a corresponding spacing value of the processing chamber. The method further includes providing the plurality of sets of sensor data as input to a trained machine learning model. The method further includes obtaining, from the trained machine learning model, one or more outputs indicative of a health of the processing chamber. The method further includes causing, based on the one or more outputs, performance of one or more corrective actions associated with the processing chamber.

Chamber matching and calibration

Methods and apparatus for controlling a semiconductor process leverage phase shifting between at least two RF generators to improve wafer performance parameters. In some embodiments, an apparatus may include a first radio frequency (RF) generator, a second RF frequency generator, a cable connected between the first RF generator and the second RF generator wherein the cable is configured to synchronize the first RF generator and the second RF generator, and an adjustable phase shift assembly with a two-dimensional trace and an adjustable contact point. The adjustable phase shift assembly is connected to the cable and configured to alter at least one water performance parameter by changing a phase shift relationship between the first RF frequency generator and the second RF frequency generator.

Methods and apparatus for adjusting wafer performance using multiple RF generators

Embodiments of the disclosure relate to methods and a system for adjusting the chucking voltage of an electrostatic chuck. In one embodiment, a system for plasma processing a substrate includes a plasma processing chamber, a radio-frequency (RF) matching circuit coupled to the chamber, a sensor and a controller. The chamber includes a chamber body having an inner volume, a bipolar electrostatic chuck disposed in the inner volume and a power supply configured to provide chucking voltage to a pair of electrodes embedded within the electrostatic chuck. When plasma is energized within the chamber by the application of RF power through an RF matching circuit, the sensor is configured to detect a change in an electrical characteristic at the RF matching circuit. The controller is coupled to the power supply and configured to adjust the chucking voltage in response to the change in the electrical characteristic detected by the sensor.

Method and system for balancing the electrostatic chucking force on a substrate

Embodiments presented herein provide techniques for predicting the topography of a product produced from a manufacturing process. One embodiment includes generating a plurality of prediction models. Each of the plurality of prediction models corresponds to a respective one of a plurality of positional coordinates of a product produced from a manufacturing process. The method also includes receiving a set of user-specified input parameters to apply to the manufacturing control process. The method further includes generating a graphical representation of a topography map for the product for the user-specified of input parameters based on the plurality of prediction models.

Topography prediction using system state information

Microwave radiation may be applied to electrochemical devices for rapid thermal processing (RTP) (including annealing, crystallizing, densifying, forming, etc.) of individual layers of the electrochemical devices, as well as device stacks, including bulk and thin film batteries and thin film electrochromic devices. A method of manufacturing an electrochemical device may comprise: depositing a layer of the electrochemical device over a substrate; and microwave annealing the layer, wherein the microwave annealing includes selecting annealing conditions with preferential microwave energy absorption in the layer. An apparatus for forming an electrochemical device may comprise: a first system to deposit an electrochemical device layer over a substrate; and a second system to microwave anneal the layer, wherein the second system is configured to provide preferential microwave energy absorption in the device layer.

Microwave rapid thermal processing of electrochemical devices

The present invention relates to sputter targets for electrochemical device layer deposition comprising a lithium-containing target material with near-metallic electrical conductivity which includes (a) at least one metal and (b) a lithium-containing material, the lithium-containing material being selected from the group consisting of lithium metal and a lithium-containing salt, wherein the at least one metal and the lithium-containing material are formed into the lithium-containing target material and wherein the lithium-containing target material is configured with a composition sufficient for physical vapor deposition of a lithium-containing electrode of the electrochemical device in a single step, the lithium-containing electrode as deposited requiring no further lithium doping. Furthermore, the composition of the metallic lithium-containing target material may be configured to provide a low enough electrical resistance to permit DC sputtering. Chambers and tools including the sputter target and process flows for fabricating electrochemical devices including steps utilizing the sputter target are also described.

Lithium containing composite metallic sputtering targets

A method of fabricating a thin film battery may comprise: depositing a first stack of blanket layers on a substrate, the first stack comprising a cathode current collector, a cathode, an electrolyte, an anode and an anode current collector; laser die patterning the first stack to form one or more second stacks, each second stack forming the core of a separate thin film battery; blanket depositing an encapsulation layer over the one or more second stacks; laser patterning the encapsulation layer to open up contact areas to the anode current collectors on each of the one or more second stacks; blanket depositing a metal pad layer over the encapsulation layer and the contact areas; and laser patterning the metal pad layer to electrically isolate the anode current collectors of each of the one or more thin film batteries. For electrically non-conductive substrates, cathode contact areas are opened-up through the substrate.

Mask-less fabrication of vertical thin film batteries

A method of depositing a dielectric thin film may include: depositing a thin layer of dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric; and repeating the depositing, stopping and inducing and maintaining steps until a desired thickness of dielectric is deposited. A variation on this method may include, in place of the repeating step: depositing a thick layer of lower quality dielectric; depositing a thin layer of high quality dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; and inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric. The thick layer of dielectric may be deposited more rapidly than the thin layers.

Pinhole-free dielectric thin film fabrication

The present invention relates to vacuum-deposited solid state electrolyte layers with high ionic conductivity in electrochemical devices, and methods and tools for fabricating said electrolyte layers. An electrochemical device may comprise solid state electrolytes with incorporated thin layers and/or particles of transition metal oxides, silicon, silicon oxide, or other suitable materials that will induce an increase in ionic conductivity of the electrolyte stack (for example, materials with which lithium is able to intercalate), or mixtures thereof. An improvement in ionic conductivity of the solid state electrolyte is expected which is proportional to the number of incorporated layers or a function of the distribution uniformity and density of the particles within the electrolyte. Embodiments of the present invention are applicable to solid state electrolytes in a broad range of electrochemical devices including thin film batteries, electrochromic devices and ultracapacitors. The solid state electrolyte layers may be nominally pinhole-free.

Pinhole-free solid state electrolytes with high ionic conductivity

Selective removal of specified layers of thin film structures and devices, such as solar cells, electrochromics, and thin film batteries, by laser direct patterning is achieved by including heat and light blocking layers in the device/structure stack immediately adjacent to the specified layers which are to be removed by laser ablation. The light blocking layer is a layer of metal that absorbs or reflects a portion of the laser energy penetrating through the dielectric/semiconductor layers and the heat blocking layer is a conductive layer with thermal diffusivity low enough to reduce heat flow into underlying metal layer(s), such that the temperature of the underlying metal layer(s) does not reach the melting temperature, T, or in some embodiments does not reach (T)/3, of the underlying metal layer(s) during laser direct patterning.

Thin film structures and devices with integrated light and heat blocking layers for laser patterning

The present invention generally relates to electrochemical devices, such as electrochromic (EC) devices and thin film batteries (TFB), and in particular to anodes of electrochemical devices with improved intercalation and/or transport properties. Some embodiments of the invention include anodes, such as nickel oxide, doped with Si, Sn, SiOand/or SnO, which may be in the form of nanoparticles or even substituted atoms/molecules. These nanoparticles/substituted atoms, which have higher lithium intercalation capability, distort the lattice of the anode, improving movement and intercalation of Li ions. In some other embodiments, the anode may be formed of silicon oxide and/or tin oxide, which materials have good transport and intercalation of Li ions.

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Cupertino, CA, United States of America

Chong Jiang