Samsung Electronics Co., Ltd.

Cholmin Kim

Jiyong Lee

Kwanghee Lee

Tae-Kyeong Ko

Deokho Seo

Jongmin Park

Chinam Kim

Jungyoung Kim

Disclosed is an operation method of a storage device which includes a write booster buffer and normal storage. The operation method includes writing first write data received from a host device in the write booster buffer, and selectively performing a flush operation on write booster buffer, in which the first write data stored in the write booster buffer are flushed to the normal storage, based on a device temperature of the storage device. Memory cells included in the write booster buffer are configured to store 'n' bits (n being a natural number), and memory cells included in the normal storage are configured to store “m” bits (m being a natural number more than n).

Storage device, operation method of storage device, and operation method of host device

A semiconductor memory system includes a memory device including plural banks, and a memory controller that generates an offset address for a first bank among the plural banks and a command indicating the offset address, based on a first request. The memory device generates a first address by adding the offset address to a base address for the first bank, according to the command, and performs a memory operation on the first address of the first bank according to the command.

Address decoding method, and memory controller and semiconductor memory system using the same

A semiconductor memory device for a hash solution includes a hashing logic block including a plurality of hashing logics configured to perform a hash function, a memory cell block including a plurality of memory cells, and an input/output (I/O) control structure configured to change a data interface between the hashing logic block and the memory cell block based on a characteristic of the hash function to be performed.

Semiconductor memory device for hash solution and method of driving the same

A host device controls a storage device to perform a read operation of a read data unit with respect to selected memory areas. A read latency corresponding to the read operation of the storage device is stored in a read latency table of the host device. A determination is made whether a latency change ratio exceeds a threshold value, based on the read latency stored in the read latency table. The data host requests a data retention operation from the storage device, through a retention command, when the latency change ratio exceeds the threshold value.

Growing community of inventors

Changwon-si, South Korea

Cholmin Kim