Hynix Semiconductor Inc.

Choi Dong Kim

Jong Hoon Kim

Sang Min Kim

Woo Yung Jung

Sung Yoon Cho

Woo Young Jung

Pil Keun Song

The present invention relates to a method of fabricating a flash memory device. In a method according to an aspect of the present invention, a first hard mask film is formed over a semiconductor laminate. A plurality of first hard mask patterns are formed by etching an insulating layer for a hard mask. Spacers are formed on top surfaces and sidewalls of the plurality of first hard mask patterns. A second hard mask film is formed over a total surface including the spacers. Second hard mask patterns are formed in spaces between the spacers by performing an etch process so that a top surface of the spacers is exposed. The spacers are removed. Accordingly, gate patterns can be formed by employing hard mask patterns having a pitch of exposure equipment resolutions or less.

Method of fabricating flash memory device

A method of forming a micro pattern in a semiconductor device, wherein a first polysilicon film, a buffer oxide film, a second polysilicon film, an anti-polishing film, and a first oxide film are sequentially laminated on a semiconductor substrate having a to-be-etched layer. The first oxide film, the anti-polishing film and the second polysilicon film are patterned. After nitride film spacers are formed on the patterned lateral portions, a second oxide film is formed on the entire structure. A Chemical Mechanical Polishing (CMP) process is performed using the anti-polishing film as a stopper. Thereafter, after the nitride film spacers are removed, the second oxide film and the second polysilicon film are removed using a difference in etch selective ratio between the oxide film and the polysilicon film. A hard mask for forming a micro pattern having a structure in which the first polysilicon film and the buffer oxide film are laminated is formed. The to-be-etched layer is etched using the hard mask as an etch barrier.

Method of forming micro pattern in semiconductor device

A method of manufacturing a flash memory device, including the steps of laminating a tunnel oxide film and a first polysilicon layer on a region of a semiconductor substrate, and forming isolation films having a step with a first polysilicon layer between the tunnel oxide film and the first polysilicon layer; forming insulating film spacers on sidewalls of the isolation films and then depositing a second polysilicon layer on the entire structure; and, etching the second polysilicon layer with a slope using a mask, thus forming a floating gate, and then forming a conductive layer on the entire structure, wherein the second polysilicon layer is etched up to the tunnel oxide film. The insulating film spacers are formed on the sidewalls of the isolation films so that they serve as barriers when the floating gate is etched. The etch depth of the floating gate can be deeply formed, making it possible to reduce the inter-cell interference phenomenon.

Method of manufacturing flash memory device

Disclosed is a method for forming a micro pattern. After a dual photoresist film having different glass transition temperatures is coated, an exposure process and a wet development process are implemented to form a dual photoresist film pattern. A RFP is then implemented for the dual photoresist film pattern. Therefore, it is possible to prohibit warpage of the photoresist film pattern. Accordingly, the uniformity of the critical dimension and a pattern shape could be improved. A good uniformity of the critical dimension and a good pattern shape in the etch process could be thus implemented.

Growing community of inventors

Icheon-si, South Korea

Choi Dong Kim