Taiwan Semiconductor Manufacturing Comp. Ltd.

Choh-Fei Yeap

Tsung-Lin Lee

Da-Wen Lin

Chih-Chieh Yeh

A method for forming a semiconductor structure is provided. The method includes forming a semiconductor fin structure including first semiconductor layers and second semiconductor layers alternatingly stacked, laterally recessing the first semiconductor layers of the semiconductor fin structure to form first notches in the first semiconductor layers, forming first passivation layers on first sidewalls of the first semiconductor layers exposed from the first notches, and forming first inner spacer layers in the first notches.

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Hsinchu, Taiwan

Choh-Fei Yeap