Samsung Electronics Co., Ltd.

Choelhwyi Bae

Jin Woo Kim

Sung Eun Kim

Sang Woo Pae

JaeHoo Park

Knut Stahrenberg

Hyun Chui Sagong

Cheong Sik Yu

Yang Gyeom Kim

A semiconductor device includes a first fin that protrudes from a substrate and extends in a first direction, a second fin that protrudes from the substrate and extends in the first direction, the first fin and the second fin being spaced apart, a gate line including a dummy gate electrode and a gate electrode, the dummy gate electrode at least partially covering the first fin, the gate electrode at least partially covering the second fin, the dummy gate electrode including different materials from the gate electrode, the gate line covering the first fin and the second fin, the gate line extending in a second direction different from the first direction, and a gate dielectric layer between the gate electrode and the second fin.

Semiconductor devices having gate electrodes and methods of manufacturing the same

A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate, monitoring processes of forming the first and second transistors to find an error and performing an additional ion implantation process to form a low-concentration dopant region or a halo region on the first transistor or the second transistor corresponding to a found error.

Method of adjusting a threshold voltage of a transistor in the forming of a semiconductor device including the transistor

Growing community of inventors

Gyeonggi-do, South Korea

Choelhwyi Bae