Stanley Electric Co., Ltd

Chizu Saito

Hiroyuki Kato

Michihiro Sano

Takayoshi Yamane

Shogo Kirai

A semiconductor light-emitting device includes a first bonding pattern made of metal that is formed on a substrate, and a second bonding pattern provided in a base portion and a flange portion of a dome-shaped transparent body. The first and second bonding patterns are bonded to each other via solder, to seal a space in a convex lid portion. The first and second bonding patterns have rectangular ring shapes that surround the semiconductor light-emitting element when viewed from above, at least edges on inner peripheral sides of corner portions thereof are positioned on outer sides of outer peripheral edges of an annular base portion of the convex lid portion, and edges on inner peripheral sides of straight-line portions sandwiched between the corner portions are positioned closer to the semiconductor light-emitting element than the outer peripheral edge of the annular base portion of the convex lid portion.

Semiconductor light-emitting device, and water disinfection device

A p-type ZnO based compound semiconductor single crystal layer, wherein the layer includes a p-type ZnO based compound semiconductor single crystal layer co-doped with (i) a Group 11 element which is Cu and/or Ag and (ii) at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and a concentration of the Group 11 element [11] and a concentration of the Group 13 element [13] fulfill the relation: 0.9&#x2266;[11]/[13]&#x3c;100.

P-type ZnO based compound semiconductor layer, a ZnO based compound semiconductor element, and an N-type ZnO based compound semiconductor laminate structure

A method for producing a p-type ZnO based compound semiconductor layer including the steps of (a) supplying (i) Zn, (ii) O, (iii) optional Mg, and (iv) a Group 11 element which is Cu and/or Ag to form a MgZnO (0&#x2266;x&#x2266;0.6) single crystal film doped with the Group 11 element; (b) supplying at least one Group 13 element selected from the group consisting of B, Ga, Al, and In on the MgZnO (0&#x2266;x&#x2266;0.6) single crystal film; (c) alternately carrying out the steps (a) and (b) to form a laminate structure; and (d) annealing the laminate structure to form a p-type MgZnO (0&#x2266;x&#x2266;0.6) layer co-doped with the Group 11 element and the Group 13 element.

Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, and an n-type ZnO based compound semiconductor laminate structure

A method for producing a p-type ZnO based compound semiconductor layer is provided. The method comprises the steps of (a) preparing an n-type single crystal ZnO based compound semiconductor structure containing a Group 11 element which is Cu and/or Ag and at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and (b) annealing the n-type single crystal ZnO based compound semiconductor structure to form the p-type ZnO based compound semiconductor layer co-doped with the Group 11 element and the Group 13 element.

Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, p-type ZnO based compound semiconductor single crystal layer, ZnO based compound semiconductor element, and n-type ZnO based compound semiconductor laminate structure

Growing community of inventors

Yokohama, Japan

Chizu Saito