Renesas Electronics Corporation

Hitachi, Ltd.

Chizu Matsumoto

Seiji Ishikawa

Yuichi Hamamura

Kazuyuki Tsunokuni

Yoshikazu Saitou

Toshiharu Miwa

Michinobu Nakao

Yoshiyuki Tsunoda

Kaname Yamasaki

Manufacturing management information relating to a module battery and single battery mounted therein which are obtained in a battery manufacturing process () is collected by a manufacturing quality information collection processing unit () and stored in a database (). In a battery diagnosis system (), when the module battery () under a usage environment is charged, an operation result processing unit () collects operation result information relating to the module () and stores the operation result information in a database (). An operation result monitoring processing unit () determines whether the operation result information is abnormal, and supplies the result of the determination to a manufacturing/usage environment factor classification processing unit (). When the result of the determination indicates that the operation result information is abnormal, the manufacturing/usage environment factor classification processing unit () diagnoses, on the basis of the manufacturing management information relating to the module battery in the database (), whether the abnormality of the operation result information is caused by a manufacturing factor or a usage environment factor, and the result of the diagnosis is created and displayed by the diagnosis result creation processing unit ().

Diagnosis system and diagnosis method for lithium ion secondary battery

In a managing system for a semiconductor manufacturing apparatus, a predicting unitpredicts a characteristic defective ratio and a foreign-substance defective ratio of each process obtains an actual defective ratio of each fail bit mode and a critical area of each process and each fail bit mode, calculates the number of foreign substances of each process by using the actual defective ratio of each fail bit mode and the critical area of each process and each fail bit mode, the fail bit mode being except for an arbitrary fail bit mode, calculates a foreign-substance defective ratio of each process and a foreign-substance defective ratio of each fail bit mode by using the number of foreign substances, and calculates a characteristic defective ratio of the arbitrary fail bit mode based on the foreign-substance defective ratio and actual defective ratio of each fail bit mode.

Defective-ratio predicting method, defective-ratio predicting program, managing method for semiconductor manufacturing apparatus, and manufacturing method for semiconductor device

A repair circuit achieving 'group repair of mixed multiple repair methods' and a repair design method for making a product margin suitable are provided. In a chip mounting multiple RAMs, a repair circuit and a repair design method in consideration of a trade-off of chip yield and area increase along with mounting a repair circuit are provided. A repair circuit achieving 'group repair of mixed multiple repair methods' which can select existence of a repair circuit, and one or more repair methods from I/O, column, and row repairs on the RAMS in the chip, respectively, when a repair circuit is mounted. The repair circuit performs repair per RAM group by sorting the RAMs mounting a repair circuit into a plurality of RAM groups. Also, a repair method which makes a number of acquired good chips in a wafer and an estimation method of the RAM grouping method are provided.

Semiconductor chip and method of repair design of the same

Growing community of inventors

Fujisawa, Japan

Chizu Matsumoto