Stanley Electric Co., Ltd

Chizu Kyotani

Naochika Horio

The ohmic contact between a growth substrate and an electrode formed thereon is improved in a zinc oxide-based semiconductor light-emitting device, thereby improving the light-emission efficiency and reliability A step for forming an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in sequence on a first principal face of a substrate having a composition of MgZnO (0&#x2266;x&#x2266;0.68); a step for forming microcracks in a second principal face of the substrate so as to extend toward an interior of the substrate; a step for carrying out a heat treatment at a temperature of 100&#xb0; C. or higher; and a step for forming an electrode by depositing a metal material composed of one among Al, a Ga alloy, and an In alloy on the second principal face of the substrate, and forming an electrode in a heat treatment at a temperature of 300&#xb0; C. to 1000&#xb0; C. are provided.

Method for producing zinc oxide-based semiconductor light-emitting device and zinc oxide-based semiconductor light-emitting device

A semiconductor device that has excellent characteristics and mass productivity wherein the introduction of defects thereinto at the time of device separation is prevented, and a method for producing the semiconductor device. In particular, there is provided a high-performance semiconductor device having excellent luminous efficiency, longevity and mass productivity; and a method for producing this semiconductor device. The method for producing the semiconductor device has a step of forming, between a substrate comprising zinc oxide (ZnO) and a device operating layer, a defect-blocking layer having a crystal composition that is different from that of the substrate, and a step of forming device dividing grooves to a depth that goes beyond the defect-blocking layer, relative to the device operating layer side surface of the substrate on which the device operating layer is formed.

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Tokyo, Japan

Chizu Kyotani