Mediatek Singapore Pte. Ltd.

Mediatek Corporation

Chiyuan Lu

Yu-Hua Huang

Cheng-Chou Hung

Chien-Chih Lin

Osama K A Shana'a

YuenHui Chee

Fei Song

Toru Matsuura

James Han Wang

Keng Leong Fong

I-Chang Wu

Ching-Chia Cheng

Meng-Hung Chen

Hsing-ting Yu

Osama KA Shana'a

A method for compensating for degradation of a signal during transmission of the signal includes: performing thermal detection and accordingly generate a thermal detection result indicative of a temperature of a signal processing circuit; and performing property adjustment to adjust a predetermined property of the signal according to the thermal detection result. The property adjustment is performed on the signal according to the thermal detection result associated with previously transmitted signal. After performing the property adjustment, a characteristic value of the signal reaches a preset level.

Method for compensating for degradation of signal during transmission of the signal and transmitter utilizing the same

A method for forming a seal ring structure provides a semiconductor substrate having a first doping region formed over a top portion thereof. The method forms a plurality of patterned photoresist layers over the semiconductor substrate, encircling the semiconductor substrate, wherein each of the patterned photoresist layers has a plurality of parallel strip portions extending along a first direction and a plurality of bridge portions formed between the parallel strip portions, and then performs an etching process to a first doping region of the substrate. The method then removes the first doping region not covered by the patterned photoresist layers and forms a plurality of patterned first doping regions. The method then removes the patterned photoresist layers and forms an isolation region between and adjacent to the patterned first doping regions. Finally, the method forms a plurality of interconnect elements over the semiconductor substrate.

Guard ring structure and method for forming the same

Some embodiments relate to power detector including a voltage sensor configured to detect a voltage of a load and a current sensor configured to detect a current of the load. The power detector also includes circuitry configured to introduce a phase delay between the detected voltage of the load and the detected current of the load, thereby producing a voltage measurement and a current measurement. The circuitry is also configured to multiply the voltage measurement and the current measurement.

Power detector

Examples of front-end modules, apparatuses and methods for coupling compensation in a closed-loop digital pre-distortion (DPD) system are described. The closed-loop DPD circuit may include a PA and a loopback path. The PA may receive a PA input signal and amplify the PA input signal to provide a PA output signal proportional to a product of the PA input signal and a gain of the PA. The loopback path may receive the PA output signal to output a loopback signal. A forward coupling and a backward coupling may exist between the PA input signal and an output of the loopback path. The output of the loopback path may be proportional to a product of the PA output signal and a gain of the loopback path. The loopback path may include a coupling cancellation mechanism configured to cancel couplings between the PA input signal and the loopback signal.

Front-end module and coupling compensation for closed-loop digital pre-distortion system

Methods and apparatus for providing adaptive biasing to power amplifiers. Adaptive bias circuits are configured to provide sharp turn on and/or current clamping to improve the efficiency of a power amplifier over a wide input signal bandwidth. Sharp turn on may be achieved using a subtraction technique to subtract outputs from multiple detectors. Clamping may be achieved using MOSFET device characteristics to pull the device from the triode region into the saturation, subtraction techniques to subtract the outputs from multiple detectors, and/or by using circuit devices, such as diodes.

Wideband adaptive bias circuits for power amplifiers

A guard ring structure having a semiconductor substrate with a circuit region encircled by a first ring and a second ring. At least one of the first and second ring includes: a plurality of separated doping regions formed in various top portions of the semiconductor substrate, providing P-N junction or N-P junction on bottom of the plurality of separated doping regions; and an interconnect element formed over the semiconductor substrate, covering at least portion of the plurality of separated doping regions.

A guard ring structure is provided, including a semiconductor substrate with a circuit region encircled by a first ring and a second ring. In one embodiment, the semiconductor substrate has a first dopant type, and the first and second ring respectively includes a plurality of separated first doping regions formed in a top portion of the semiconductor substrate, having a second dopant type opposite to the first conductivity type, and an interconnect element formed over the semiconductor substrate, covering the first doping regions.

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San Jose, CA, United States of America

Chiyuan Lu