Konica-minolta Holdings, Inc.

Konica Minolta, Inc.

Chiyoko Takemura

Katsura Hirai

Tatsuo Tanaka

Hiroshi Kita

Rie Katakura

Reiko Obuchi

Tomonori Kawamura

Atsuko Matsuda

To provide a functional film having excellent bending resistance and stability under high temperature and high humidity conditions, a method for producing the same, and an electronic device including the functional film. A functional film including a resin base, a functional inorganic layer arranged on the resin base, and a hybrid layer arranged on at least one surface of the functional inorganic layer, in which the hybrid layer contains a polysiloxane and fine resin particles.

Functional film having a hybrid layer of polysiloxane and fine resin particles

Disclosed is a gas barrier film which has both high gas barrier performance and high cracking (bending) resistance. Specifically disclosed is a gas barrier film which comprises, on a substrate in the following order, at least one silanol-containing layer and at least one gas barrier layer that contains silicon atoms and hydrogen atoms. The gas barrier film is characterized in that the relative SiOH ion strength in the central part of the silanol-containing layer in the film thickness direction as detected by time-of-flight secondary ion mass spectrometry (Tof-SIMS) is 0.02-1.0 when the relative Si ion strength is taken as 1. Also disclosed is an organic photoelectric conversion element which comprises the gas barrier film.

Gas barrier film, method of manufacturing gas barrier film, and organic photoelectric conversion element

An organic thin film transistor comprising a semiconductor layer containing a thiophene oligomer which has a thiophene ring having a substituent and a partial structure constituted by directly connected two or more thiophene rings each having no substituent, and contains three to forty thiophene rings per molecule.

Organic thin film transistor

A method for forming an organic semiconductor film having a high carrier mobility is provided by having an average volatilization rate of a solvent within a prescribed range during a step of drying, at the time of applying a coating solution, which includes an organic semiconductor material and a non-halogen solvent, on a substrate. In such forming method, characteristic fluctuation in repeated use of the organic semiconductor film is suppressed, and an organic thin film transistor having an excellent film forming characteristic even on an insulator with reduced gate voltage threshold can be obtained.

Organic semiconductor film forming method, organic semiconductor film and organic thin film transistor

A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point.

Method of manufacturing organic film transistor

An organic semiconductor material comprising a compound having a substructure represented by Formula (10): wherein B represents a unit having a thiazole ring, Aand Aeach independently represent a unit having an alkyl group as a substituent, Arepresents a divalent linking group, nrepresents an integer 1-20, nand neach independently represent an integer of 0-20, respectively, and nrepresents an integer of 0-10.

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Tokyo, Japan

Chiyoko Takemura