Hermes Microvision Inc.

Asml Netherlands B.v.

Other

Kla-tencor Technologies Corporation

Kkt Holdings Syndicate

Chiyan Kuan

Chung-Shih Pan

You-Jin Wang

Youjin Wang

Guochong Weng

Zhongwei Chen

Wei Fang

Yixiang Wang

Joe Wang

Van-Duc Nguyen

Weiming Ren

Jack Jau

Feng Cao

Zhonghua Dong

David Aitan Soltz

Yi-Xiang Wang

Edward Michael James

Xiaoli Guo

Yu-Kuang Tseng

Tzu-Yi Kuo

Roger L Kroeze

David A Crewe

Cheng Ta Kao

Gregory W Grant

Thierry H C Nguyen

Salvatore T Fahey

Tianming Chen

Zhi Po Wang

A system for grounding a mask using a grounding component are provided. Some embodiments of the system include a grounding component comprising a base and an extension protruding from the base and comprising a conductive prong configured to contact a conductive layer of the mask. Some embodiments of the system include a plurality of conductive prongs configured to contact multiple positions of a conductive layer of the mask. Some other embodiments of the system include an extension comprising various shapes.

System for inspecting and grounding a mask in a charged particle system

A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EU mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

Method and system for inspecting an EUV mask

Systems and methods are provided for dynamically compensating position errors of a sample. The system can comprise one or more sensing units configured to generate a signal based on a position of a sample and a controller. The controller can be configured to determine the position of the sample based on the signal and in response to the determined position, provide information associated with the determined position for control of one of a first handling unit in a first chamber, a second handling unit in a second chamber, and a beam location unit in the second chamber.

Charged particle beam inspection of ungrounded samples

An epitaxial LED wafer is provided and chip process is processed such that each LED chip on the epitaxial wafer can be probed by an array of probe pin and results can be stored in a database. The epitaxial wafer is then diced on an expandable tape, and a display substrate is provided with driving circuits. The tape is expanded such that a pitch of LED chips on the tape is equal to a pitch of LED chips on display substrate. An array of drop pins will collectively and selectively drop LED chips, from the tape to the display substrate, with the same specification according to the probed results in the database.

Micro LED display panel

A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.

Structure electron beam inspection system for inspecting extreme ultraviolet mask and structure for discharging extreme ultraviolet mask

Method and system for inspecting and grounding an EUV mask

This invention relates to methods and systems for enhance the signal-to-noise ratio of an image scanned by a charged particle beam. In an embodiment, a sequence of grayscales of a pixel is recorded first, extreme values of the sequence of grayscales are then identified and removed, and the remained grayscales are used to determine a nominated grayscale of the pixel.

Method and system for enhancing image quality

The present invention provides a dual-beam apparatus which employs the dark-field e-beam inspection method to inspect small particles on a surface of a sample such as wafer and mask with high throughput. The dual beam apparatus comprises two single-beam dark-field units placed in a same vacuum chamber and in two different orientations. The two single-beam dark-field units can perform the particle inspection separately or almost simultaneously by means of the alternately-scanning way. The invention also proposes a triple-beam apparatus for both inspecting and reviewing particles on a sample surface within the same vacuum chamber. The triple-beam apparatus comprises one foregoing dual-beam apparatus performing the particle inspection and one high-resolution SEM performing the particle review.

Charged particle beam apparatus

A system for operating EUV mask stored in reticle SMIF pod and/or dual pod is provided, wherein the reticle SMIF pod and Dual pod are for storing EUV mask. The system can be a sorter for EUV mask transferred from reticle SMIF pod into dual pod, and vice versa, or an operating system for tools relating to EUV mask, wherein the tools may be EUV lithography, or inspection tool for inspecting EUV mask.

Reticle operation system

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Danville, CA, United States of America

Chiyan Kuan