Samsung Electronics Co., Ltd.

Chiwook Kim

SunWon Kang

Jong-Min Oh

Hoyoung Song

Donghyun Sohn

Sangjoon Hwang

Hyun Jeong Woo

Yung-young Lee

Provided is a method of preventing simultaneous activation of redundancy memory line or spare word lines, the method including: programming a fail address of a memory line determined to be defective; reprogramming the fail address if a first spare line for the memory line is determined to be defective; storing additional information with respect to the reprogrammed fail address; and activating a second spare line and inactivating the first spare line, referring to the additional information.

Post package repairing method, method of preventing multiple activation of spare word lines, and semiconductor memory device including fuse programming circuit

A semiconductor chip package eliminates and minimizes a power noise generated from a voltage generation circuit in the semiconductor chip package includes an integrated circuit chip with a voltage generation circuit that receives an external voltage to generate a supply voltage to be used in an internal circuit and a connection terminal connected to an output node of the voltage generation circuit, and a mounting substrate including a noise eliminator electrically connected to the connection terminal to reduce a power noise of the supply voltage and a mounting substrate to mount the integrated circuit chip to package the integrated circuit chip as the semiconductor chip package.

Semiconductor chip package including voltage generation circuit with reduced power noise

Growing community of inventors

Hwaseong-si, South Korea

Chiwook Kim