United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Chiung-Lin Hsu

En-Chiuan Liou

Feng-Yi Chang

Fu-Che Lee

Chieh-Te Chen

Chien-Ting Ho

Chien-Cheng Tsai

Ming-Feng Kuo

Li-Chiang Chen

Chia-Hsun Tseng

Hsien-Shih Chu

Yi-Wang Zhan

Yu-Ting Hung

Shin-Feng Su

Meng-Lin Tsai

Chin-Hsin Chiu

Yu-Te Chen

Jan-Fu Yang

A method of fabricating an isolation structure is provided. A first oxide layer and a first, second, and third hard mask layers are formed on a substrate. A patterned third hard mask layer is formed. Second oxide layers are formed on sidewalls of the patterned third hard mask layer and a fourth hard mask layer is formed between the second oxide layers. The second oxide layers and the second hard mask layer are removed using the patterned third hard mask layer and the fourth hard mask layer as a mask, to form a patterned second hard mask layer. The patterned third hard mask layer and the fourth hard mask layer are removed. A portion of the patterned second hard mask layer is removed to form trench patterns. A patterned first hard mask layer and first oxide layer, and trenches located in the substrate are defined. An isolation material is formed.

Method of fabricating isolation structure

A method of adjusting channel widths of semiconductive devices includes providing a substrate divided into a first region and a second region, wherein the substrate comprises numerous fins. A first implantation process is performed on the fins within the first region. Then, a second implantation process is performed on the fins within the second region, wherein the first implantation process and the second implantation process are different from each other in at least one of the conditions comprising dopant species, dopant dosage or implantation energy. After that, part of the fins within the first region and the second region are removed simultaneously to form a plurality of first recesses within the first region and a plurality of second recesses within the second region. Finally, a first epitaxial layer and a second epitaxial layer are formed to fill up each first recess and each second recess, respectively.

Method of adjusting channel widths of semiconductive devices

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Tainan, Taiwan

Chiung-Lin Hsu