Mh Gopower Company Limited

Pynmax Technology Co., Ltd.

Chiun-Yen Tung

Terry L Zahuranec

Jonathan A Jackson

Mark J Elting

Remigio Perales

Cheng-liang Wu

Mei-huan Yang

Kun-Hsien Chen

Chin-Wei Hsu

Ying-Jie Peng

Ping-Pang Lee

Kai-Ying Wang

Wen-Li Tsai

Michael J Creager

Extremely fast dynamic control is allowed for hybrid PV/T (photovoltaic/thermal) distributed power production using concentrated solar power by manipulating the transmissive or reflective state of a capture element or mirror or lens that can pass highly concentrated solar light from one energy conversion device to another, such as a thermal collector and a photovoltaic receiver, such as a vertical multijunction cell array. This allows superior quality electrical backfeed into an electric utility, enhanced plant electrical production revenue, and responsiveness to a multitude of conditions to meet new stringent engineering requirements for distributed power plants. The mirror or lens can be physically articulated using fast changing of a spatial variable, or can be a fixed smart material that changes state. A mechanical jitter or variable state jitter can be applied to the capture element, including at utility electric grid line frequency.

Utility-friendly hybrid energy conversion system for apportioning concentrated solar radiation in real time upon selective demand between a plurality of solar energy conversion devices, including a photovoltaic receiver

A Schottky diode with high antistatic capability has an N&#x2212; type doped drift layer formed on an N+ type doped layer. The N&#x2212; type doped drift layer has a surface formed with a protection ring. Inside the protection ring is a P-type doped area. The N&#x2212; type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N&#x2212; type doped drift layer and the P-type doped area forms a Schottky contact. The P-type doped area has a low-concentration lower layer and a high-concentration upper layer, so that the surface ion concentration is high in the P-type doped area. The Schottky diode thus has such advantages of lowered forward voltage drop and high antistatic capability.

Schottky diode with high antistatic capability

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Kaohsiung, Taiwan

Chiun-Yen Tung