Personal Genomics, Inc.

Industrial Technology Research Institute

Chiun-Lung Tsai

Jui-Feng Huang

Chih-Yang Chen

Ming-Fang Hsu

Chen-Shiun Chou

A radiation image detector with automatic exposure detection includes a high voltage circuit unit for providing an operation bias. An image sensing panel includes semiconductor multi-layer structure, receives the operation bias and senses an incident X-ray, and produces holes and electrons. The holes produce positive charges for forming an image. An automatic exposure detector is coupled to the high voltage circuit unit to transfer the operation bias and detects variation pattern with time of a voltage signal or a current signal induced by the electrons to determine an onset time or a cessation time for exposure. A control unit couples to the high voltage circuit unit, the image sensing panel, and the automatic exposure detector and configured to perform system control, including obtaining an image signal from the image sensing panel. An imaging unit couples to the control unit to process the image signal and display and store the image.

Radiation image detector with capability of automatic exposure detection (AED) and AED method

A multi junction photodiode for molecular detection and discrimination and fabrication methods thereof. The multi junction photodiode includes a substrate having first conductive type dopants, an epitaxial layer having the first conductive type dopants, a deep well having second conductive type dopants, a first well having the first conductive type dopants, a second well having the second conductive type dopants, a third well having the first conductive type dopants, and a first doped region having the second conductive type dopants. The epitaxial layer is disposed on the substrate. The deep well is disposed in the epitaxial layer. The first well having three sides connected to the epitaxial layer is disposed in the deep well. The second well is disposed in the first well. The third well having three sides connected to the epitaxial layer is disposed in the second well. The first doped region is disposed in the third well.

Multi-junction photodiode in application of molecular detection and discrimination, and method for fabricating the same

A multi-junction photodiode for molecular detection and discrimination and fabrication methods thereof. The multi junction photodiode includes a substrate having first conductive type dopants, an epitaxial layer having the first conductive type dopants, a deep well having second conductive type dopants, a first well having the first conductive type dopants, a second well having the second conductive type dopants, a third well having the first conductive type dopants, and a first doped region having the second conductive type dopants. The epitaxial layer is disposed on the substrate. The deep well is disposed in the epitaxial layer. The first well having three sides connected to the epitaxial layer is disposed in the deep well. The second well is disposed in the first well. The third well having three sides connected to the epitaxial layer is disposed in the second well. The first doped region is disposed in the third well.

Growing community of inventors

Taipei, Taiwan

Chiun-Lung Tsai