Taiwan Semiconductor Manufacturing Comp. Ltd.

Chiu-Jung Chen

Hsin-Chi Chen

Kuo-Cheng Lee

Yun-Wei Cheng

Volume Chien

Yung-Lung Hsu

Chun-Hao Chou

Chi-Cherng Jeng

Fu-Tsun Tsai

Chen-Chun Chen

Shiu-Ko JangJian

Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.

Semiconductor image sensor device having back side illuminated image sensors with embedded color filters

Method of fabricating semiconductor image sensor device having back side illuminated image sensors with embedded color filters

A method of manufacturing a semiconductor structure includes providing a first wafer including a surface, removing some portions of the first wafer over the surface to form a plurality of recesses extended over at least a portion of the surface of the first wafer, providing a second wafer, and disposing the second wafer over the surface of the first wafer.

Manufacturing method of forming a semiconductor wafer structure

A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A buffer layer is disposed over the second side of the substrate. A plurality of elements is disposed over the buffer layer. The elements and the buffer layer have different material compositions. A plurality of light-blocking structures is disposed over the plurality of elements, respectively. The radiation-sensing regions are respectively aligned with a plurality of openings defined by the light-blocking structures, the elements, and the buffer layer.

Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer

A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of light-blocking structures is disposed over the second side of the substrate. A passivation layer is coated on top surfaces and sidewalls of each of the light-blocking structures. A plurality of spacers is disposed on portions of the passivation layer coated on the sidewalls of the light-blocking structures.

Formation of buried color filters in a back side illuminated image sensor with an ONO-like structure

A semiconductor structure includes a wafer including a first surface and a periphery, a plurality of protrusions protruded from the first surface and a plurality of recesses spaced from each other by the plurality of protrusions, and each of the plurality of recesses is extended from the periphery of the wafer and is elongated across the first surface of the wafer.

Semiconductor wafer structure

Formation of buried color filters in a back side illuminated image sensor with an ono-like structure

A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. The radiation-sensing regions are separated by a plurality of gaps. A plurality of radiation-blocking structures is disposed over the second side of the substrate. Each of the radiation-blocking structures is aligned with a respective one of the gaps. A plurality of color filters are disposed in between the radiation-blocking structures.

A backside illuminated (BSI) image sensor device includes a substrate including a front side and a back side; a radiation-sensing region in the substrate; a metal post with a longitudinal height and disposed over the back side; and a color filter adjacent to the metal post and substantially over the radiation-sensing region. The radiation-sensing region is configured to detect a radiation wave entering from the back side.

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Tainan, Taiwan

Chiu-Jung Chen