Micron Technology Incorporated

Chittoor Ranganathan Parthasarathy

Haitao Liu

Naveen Kaushik

Gaurav Musalgaonkar

Sonam Jain

An apparatus includes lightly doped drain regions vertically extending into a semiconductor substrate. A channel region is horizontally interposed between the lightly doped drain regions, and source/drain regions vertically extend into the lightly doped drain regions. Breakdown-enhancement implant intrusion regions are within the lightly doped drain regions and are horizontally interposed between the channel region and the source/drain regions. The breakdown enhancement implant regions have a different chemical species than the lightly doped drain regions and have upper boundaries vertically underlying upper boundaries of the lightly doped drain regions. The apparatus also has a gate structure vertically overlying the channel regions and it is horizontally interposed between the breakdown-enhancement implant regions. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

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Telangana, India

Chittoor Ranganathan Parthasarathy