Samsung Electronics Co., Ltd.

Chisung Oh

Hyeran Kim

Sungrae Kim

Gilyoung Kang

Kijun Lee

Myungkyu Lee

Sunghye Cho

Sanguhn Cha

Daehyun Kwon

Hyejung Kwon

Yujung Song

Junghwan Choi

Changkyu Seol

Kyomin Sohn

Jaeyoun Youn

Jong-Ho Moon

SungYong Cho

SeungHan Woo

Yong-Ki Kim

Soojung Rho

Minho Maeing

A semiconductor memory device includes a memory cell array, an on-die error correction code (ECC) engine and a control logic circuit. The on-die ECC engine includes a first latch and a second latch. The control logic circuit sets the semiconductor memory device to a test mode in response to a first mode register set command. The on-die ECC engine, in the test mode, cuts off a connection with the memory cell array, receives a test data, stores the test data in the first latch, performs an ECC decoding on the test data stored in the first latch and a test parity data, stored in the second latch in response to a read command and provides an external device with a severity signal indicating whether the test data and the test parity data includes at least one error bit and the at least one error bit is correctable.

Semiconductor memory device including an on-die ECC engine

A semiconductor memory device includes a memory cell array and a cyclic redundancy check (CRC) engine. The memory cell array includes a plurality of volatile memory cells coupled to respective ones of a plurality of word-lines and respective ones of a plurality of bit-lines. The CRC engine, during a memory operation on the memory cell array, detects an error in a main data and a system parity data provided from a memory controller external to the semiconductor memory device through a link, generates an error flag indicating whether the detected error corresponds to either a first type of error associated with the link or a second type of error associated with the volatile memory cells based on the system parity data and transmit the error flag to the memory controller.

Semiconductor memory device including a cyclic redundancy check engine and memory system including the same

An apparatus, a memory device, and a method for storing parameter codes with respect to asymmetric on-die-termination (ODT) are provided. The apparatus is connected to an external device via a signal line, and includes: an on-die termination (ODT) circuit set in a first ODT state; a plurality of signal pins, each of which is connected to the signal line; and an ODT control circuit configured to: identify whether a second ODT state of the external device corresponds to the first ODT state, and based on the apparatus being an asymmetric ODT in which the first ODT state and the second ODT state are different, provide an asymmetric ODT parameter code to the external device, and disable the ODT circuit when a signal is not transmitted through the signal line.

Apparatus, memory device and method for storing parameter codes for asymmetric on-die-termination

A memory system includes a host system having a memory controller therein, which is configured to generate a command address signal. The memory controller includes a first bit signal generator configured to generate a data signal as a plurality of data bits, a second bit signal generator configured to generate a command address bus inversion bit (CABIB) having a high or low logic level that is a function of a number of data bits within the data signal having a predetermined logic level, and a parity bit generator configured to set a parity signal to a first logic level when a total number of data bits within the data signal and the CABIB having a high logic level is an even number. A storage system is also provided, which is configured to write or read data in response to the command address signal received from the host system. The memory controller is configured to set the CABIB to a high logic level when: (i) 'n', which is a number of bits included in the command address signal, is a positive integer greater than one, and (ii) a number of data bits within the data signal having a low logic level is greater than or equal to (n/2)−1.

Memory systems and controllers for generating a command address and methods of operating same

A semiconductor memory device includes a memory cell array and an on-die error correction code (ECC) engine. The on-die ECC engine, during a write operation, generates a second main data by encoding a first main data with a random binary code, performs an ECC encoding on the second main data to generate a parity data and stores the second main data and the parity data in a target page in the memory cell array. The on-die ECC engine, during a read operation, reads the second main data and the parity data from the target page, performs an ECC decoding on the second main data based on the parity data to generate a syndrome in parallel with generating the first main data by encoding the second main data with the random binary code and corrects at least one error bit in the first main data based on the syndrome.

Semiconductor memory device and method of operating semiconductor memory device

Semiconductor memory device and memory system including the same

A transmitter includes an encoder configured to divide a first number of binary input bits of an input data signal into a first bit group and a second bit group, generate a first intermediate bit group and a second intermediate bit group by manipulating the first bit group and the second bit group differently based on a value of the first bit group, and generate a first symbol group and a second symbol group by encoding the first intermediate bit group and the second intermediate bit group, each of the first symbol group and the second symbol group including a plurality of symbols, and each of the plurality of symbols having three different voltage levels. The transmitter includes a driver configured to generate an output data signal by concatenating the first symbol group and the second symbol group.

Transmitter and receiver for 3-level pulse amplitude modulation signaling and system including the same

A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view.

Semiconductor device including through silicon vias distributing current

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Suwon-si, South Korea

Chisung Oh