Tokyo Electron Limited

Tokyo Electron Yamanashi Limited

Other

Japan Science and Technology Corporation

Tokyo Electron Limi Ted

Hitachi Construction Machinery Co., Ltd.

Tokyo Electron Kabushiki Kaisha

Chishio Koshimizu

Yohei Yamazawa

Tatsuo Matsudo

Jun Yamawaku

Naoki Matsumoto

Manabu Iwata

Masashi Saito

Akira Koshiishi

Kazuki Denpoh

Masaru Sugimoto

Hidetoshi Hanaoka

Noriyuki Kobayashi

Shinji Kubota

Satoshi Tanaka

Jun Abe

Takashi Dokan

Manabu Sato

Hiroki Yamazaki

Koji Maruyama

Toshihiro Hayami

Taichi Hirano

Nobuo Ishii

Shinji Himori

Koichi Nagami

Kimihiro Higuchi

Hitoshi Kato

Shigehiro Miura

Yoshinobu Hayakawa

Susumu Saito

Akitaka Shimizu

Takeshi Kobayashi

Masahiro Inoue

Kazuya Dobashi

Mitsuhiro Tachibana

Hideki Takeuchi

Asao Yamashita

Michishige Saito

Masanobu Honda

Kazuya Nagaseki

Hiroshi Nishikawa

Jun Hirose

Kunihiko Hinata

Ryuji Ohtani

Kazuo Kibi

Daisuke Yano

Tomohiro Suzuki

Shin Hirotsu

Yoshinobu Ohya

Toru Ito

Gen Tamamushi

Kenji Nagai

Michiko Nakaya

Jun Ooyabu

Tsutomu Higashiura

Yoshinobu Ooya

Toru Hayasaka

Takafumi Kimura

Sumie Segawa

Hiroyuki Ishihara

Fumihiko Higuchi

Nobuhiro Iwama

Takenobu Ikeda

DongSheng Zhang

Norikazu Murakami

Ryuji Hisatomi

Hachishiro Iizuka

Shoichiro Matsuyama

Issei Imahashi

Teruo Iwata

Yoshifumi Tahara

Jiro Hata

Hiroshi Nakamura

Toshiaki Hongoh

Hiromasa Mochiki

Hideaki Tanaka

Masafumi Ito

Shosuke Endoh

Koichi Nagakura

Noriyuki Iwabuchi

Natsumi Torii

Shigeaki Kato

Yasuo Hayakawa

Youichi Nakayama

Toshiyuki Kobayashi

Tomoya Okubo

Kazunori Nagahata

Kazuo Eguchi

Hisashi Fujiwara

Noriaki Kodama

Yuji Aota

Sakae Takeda

Ryoichiro Koshi

Toshio Nonaka

Fumiaki Koiwa

Yasuyuki Okamura

Tatsuo Shiina

Isei Imahashi

A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

Plasma processing method and plasma processing apparatus

A plasma processing apparatus comprises a chamber, a substrate support, a plasma generator, a bias power supply and a chuck power supply. The substrate support includes a base and a dielectric part. The base includes a base member and an electrode. The base member is made of a dielectric or an insulator. The electrode is formed on an upper surface of the base member. The electrode forms an upper surface of the base. The dielectric part provides a supporting surface on which a substrate is placed. The dielectric part extends from the upper surface of the base to the supporting surface and is made of only a dielectric. The bias power supply and the chuck power supply are electrically connected to the electrode of the base.

Plasma processing apparatus and substrate processing method

A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a bias power supply. The radio-frequency power supply generates source radio-frequency power to generate plasma in the chamber. The bias power supply provides a pulse of bias energy to a bias electrode in each of a plurality of pulse periods. The radio-frequency power supply sets, based on a change in a degree of reflection of the source radio-frequency power, a source frequency of the source radio-frequency power in each of a plurality of phase periods in each of a plurality of overlap periods. Each of the plurality of overlap periods overlaps a corresponding pulse period of the plurality of pulse periods. The degree of reflection is identified with the source frequency being set differently in identical phase periods in two or more preceding overlap periods.

Plasma processing apparatus and method for controlling source frequency of source radio-frequency power

A disclosed plasma processing apparatus includes a substrate support. The substrate support has a first region configured to support a substrate and a second region configured to support an edge ring. The first electrode is provided in the first region. The second electrode is provided in the second region. The first bias power source is connected to the first electrode via the first circuit. The second bias power source is connected to the second electrode via the second circuit. The second circuit has impedance higher than impedance of the first circuit at a common bias frequency of a first electrical bias generated by the first bias power source and a second electrical bias generated by the second bias power source.

Plasma processing apparatus

A plasma processing apparatus includes a plasma processing chamber, a substrate support including a bias electrode, an RF power source configured to generate RF power to generate plasma in the plasma processing chamber, an edge ring disposed to surround a substrate on the substrate support, a ring electrode disposed to surround the edge ring, a first bias RF power source and a second bias RF power source. The first bias RF power source is configured to supply a first bias RF power to the bias electrode, the first bias RF power having a first frequency and a first power level. The second bias RF power source is configured to supply a second bias RF power to the ring electrode, the second bias RF power having the first frequency and a second power level and the second bias RF power being synchronized with the first bias RF power.

Provided is a technique for stably applying a voltage to an edge ring. Provided is a substrate support including: a substrate mounting surface on which a substrate is mounted; an edge ring mounting surface on which an edge ring is mounted around the substrate mounting surface; and a conductive electrode formed on the edge ring mounting surface and configured to apply a voltage to the edge ring.

Substrate support and substrate processing apparatus

There is provided a plasma processing apparatus for performing plasma processing or a substrate, comprising: a chamber; a substrate support disposed in the chamber and including a base, an electrostatic chuck on the base, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; a Radio Frequency (RF) power supply for supplying RF power for generating plasma from gases in the chamber; a DC power supply for applying a negative DC voltage to the edge ring; a waveform control element for controlling a waveform of the DC voltage; and a controller for controlling a time taken for the DC voltage to reach a desired value by adjusting a constant of the waveform control element.

Plasma processing apparatus and plasma processing method

In a plasma processing apparatus, a radio-frequency power supply adjusts frequencies of radio-frequency power in each bias cycle of electrical bias energy. The radio-frequency power supply uses a reference time series of frequencies of the radio-frequency power in each bias cycle. The radio-frequency power supply repeats using a changed time series of frequencies of the radio-frequency power in each bias cycle to increase a degree of match based on an evaluation value. The changed time series results from shifting the reference time series by a phase shift amount, scaling the reference time series in a frequency direction, or scaling two or more of multiple time zones of the reference time series in a time direction.

A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; an edge ring disposed on the substrate support to surround a substrate on the substrate support; an actuator configured to vertically move the edge ring; a gas supply configured to supply a cleaning gas into the plasma processing chamber; a power source configured to supply a power to the substrate support; and a controller configured to: (a) maintain the edge ring at a first position spaced apart from the substrate support; and (b) supply a power to the substrate support while supplying the cleaning gas into the plasma processing chamber to generate a local plasma in a gap between the edge ring maintained at the first position and the substrate support, thereby cleaning the edge ring and the substrate support.

Cleaning method and plasma processing apparatus

A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.

Control method and plasma processing apparatus

A plasma processing apparatus includes: a chamber; a substrate support provided in the chamber; a bias power supply that supplies an electrical bias energy to an electrode of the substrate support; a matching box including a matching circuit; a radio-frequency power supply that supplies a radio-frequency power having a variable frequency into the chamber through the matching box, and adjusts the frequency of the radio-frequency power in each of a plurality of phase periods within the cycle of the electrical bias energy; a sensor that detects an electrical signal reflecting a deviation of a load impedance of the radio-frequency power supply from a matching state; and a filter that generates a filtered signal by removing and an intermodulation distortion component of the radio-frequency power and the electrical bias energy from the electrical signal in each of the plurality of phase periods.

Plasma processing apparatus and processing method

A plasma processing method according to an exemplary embodiment includes preparing a substrate in a chamber of a plasma processing apparatus. The substrate is disposed on a substrate support in the chamber. The substrate support includes a lower electrode and an electrostatic chuck. The electrostatic chuck is provided on the lower electrode. The plasma processing method further includes applying a positive voltage to a conductive member when plasma is being generated in the chamber for plasma processing on the substrate. The conductive member extends closer to a grounded side wall of the chamber than the substrate.

An apparatus, method, and non-transitory computer-readable medium reduces the power level of a reflected wave from a load coupled to a radio-frequency power supply. A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, a bias power supply, and a controller. The bias power supply periodically applies a pulsed negative voltage to the substrate support. The controller controls the radio-frequency power supply to provide radio-frequency power with a changed frequency within a period in which the pulsed negative voltage is applied from the bias power supply to the substrate support, to reduce a power level of a reflected wave from a load that is coupled to the radio-frequency power supply.

The disclosed plasma processing apparatus includes a chamber, a substrate support, a radio frequency power source, and a bias power source. The radio frequency power source generates radio frequency power to generate plasma. The bias power source is connected to a bias electrode of the substrate support, and generates an electric bias. An edge ring mounted on the substrate support receives a part of the electric bias through an impedance adjuster or receives another electric bias. An outer ring extends outside the edge ring in a radial direction, and receives a part of the radio frequency power or other radio frequency power.

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Nirasaki, Japan

Chishio Koshimizu