Frontec Incorporated

Alps Electric Co., Ltd.

Other

Lg Philips Lcd Co., Inc.

Chisato Iwasaki

Hirofumi Fukui

Yasuhiko Kasama

Akira Nakano

Tadahiro Ohmi

Hiroyuki Hebiguchi

Ken Kawahata

Koichi Fukuda

Hitoshi Seki

Kenji Yamamoto

Masanori Miyazaki

Masami Aihara

Tomofumi Oba

Kazuya Okabe

Tatsumi Fujiyoshi

Hirohisa Kikuyama

Yukimitsu Yamada

Osamu Yoshida

Hitoshi Kitagawa

Matagoro Maeno

Masayuki Miyashita

Tatsuhiro Yabune

Koji Kikuchi

Satoshi Miyazawa

Hideyuki Matsuda

Jun Takano

Masaru Kubota

Akane Sekiya

Kazuya Oakabe

Satoshi Fujimoto

A shift register having a plurality of stages connected in cascade shifts an output signal by a plurality of clocks having different phases. Each of the stage includes an input diode to which a signal is input from a preceding stage, a capacitor for holding charge having a voltage level of the input signal, a first transistor that is turned on or off by the held voltage level to output an output signal to a following stage in synchronization with a clock signal, and a second transistor connected between the input diode and an output terminal. A control electrode of the second transistor is connected to the input diode in the following stage. The second transistor has a clamping function for discharging the accumulated charge and turning off the first transistor when the clock signal is phase-shifted.

Shift register that suppresses operation failure due to transistor threshold variations, and liquid crystal driving circuit including the shift register

An electronic device which comprises a gate electrode on one surface of a substrate and a gate insulating film covering the substrate and the gate electrode therewith is described. The device further comprises a semiconductor active layer formed above the gate electrode and having a width smaller than the gate electrode, and a source electrode and a drain electrode formed on the semiconductor active layer through an ohmic contact layer wherein the space between the source electrode and the drain electrode kept away from each other is wider than the space between the spaced ohmic contact layers, and the substrate is irradiated with light from the other surface on which the gate electrode is not formed. A method for making the device is also described.

Electronic device and a method for making the same

A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semiconductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions. The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost adjacent thin film transistors.

Method of producing an electro-optical device

A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semi-conductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions. The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost adjacent thin film transistors.

A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semiconductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions. The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost, adjacent thin film transistors.

An apparatus which allows a first film to be formed on a substrate by chemical vapor deposition (CVD) and a second film to be formed on the substrate by sputtering, wherein the processes are performed sequentially in the same deposition chamber without exposing the substrate to an oxidative atmosphere. The deposition chamber includes a first electrode and a second electrode located under the first electrode. A transfer mechanism loads a dummy target onto the first electrode and the substrate onto the second electrode prior to a CVD process. The dummy target is resistant to sputtering and thus does not contaminate the film deposited on the substrate during CVD. After CVD and prior to sputtering, the transfer mechanism unloads the dummy target and replaces it with a sputtering target for film formation by sputtering. Both the dummy target and sputtering target can be loaded and unloaded from a single pressurized storage chamber. Thus, film formation by both sputtering and CVD can be accomplished by using a single deposition chamber without removing the substrate between processes.

Single chamber for CVD and sputtering film manufacturing

A method for producing an electo-optical device including only five photolithographic steps, including a first photolithographic step for forming a gate electrode and gate wiring, a second photolithographic step for forming a semiconductor portion above the gate electrode, a third photolithographic step for forming a contact hole through the first insulator film to the gate wiring, a fourth photolithographic step for forming a source electrode, a source wiring and a drain electrode and then forming a channel portion above the gate electrode exposing said semiconductor active film and forming a transparent pixel electrode, and a fifth photolithographic step for forming a light-permeable opening above the transparent pixel electrode, and a contact hole for source wiring and gate wiring connection terminals.

An etching agent and an electronic device manufacturing method using the etching agent. The etching agent contains, in a solution, hydrofluoric acid at a concentration of 0.05 to 0.5 mol/l, and halooxoacid ions, represented by the formula (XO.sub.n).sup.p- (wherein X is a halogen element, n is 3, 4 or 6, p is 1, 2 or 3), at a concentration of at least 0.01 mol/l. An electronic device manufactured using the etching agent requires only a single etching step to etch both conductive layers (such as aluminum) as well as ohmic contact layers (a-Si).

Etching agent, electronic device and method of manufacturing the device

The present invention provides a method of removing a photoresist film, which exhibits the high ability to remove photoresist and excellent safety and handling properties such as workability, In the removing method, the photoresist film is removed by chemical decomposition in an inorganic aqueous solution under ultraviolet-light irradiation. The inorganic aqueous solution is an aqueous solution of peroxomonosulfate or an aqueous solution containing 4.5 to 36 wt % of sulfuric acid and 0.05 to 0.8 wt % of hydrogen peroxide.

Method of removing photoresist film

An electronic element having a sufficient dielectric strength remarkably superior to any of the conventional ones. In this element, a conductive wire pattern is formed on the surface of a substrate which is insulative at least in its surface, and an insulating layer is so formed as to cover the substrate and the wire pattern either partially or entirely. The insulating layer is composed of a silicon nitride film where the oxygen content is less than 10 atomic percent at least in the vicinity of a step portion of the wire pattern. There is also provided a method of producing such electronic element, wherein the insulating layer is formed by plasma enhanced CVD under the conditions that the following relationship among a film forming temperature T (.degree. C.), an ion flux I (A) and a film forming speed v (nm/min): T.gtoreq.-651 (I/v)+390, 150.ltoreq.T.ltoreq.350 (where the ion flux denotes the current (A) per 60.times.60 cm.sup.2). According to this method, an insulating film of a high withstand voltage with a great dielectric strength can be obtained stably at a high yield rate.

Electronic element and method of producing same

A method for manufacturing thin films in which a first film is formed on a substrate using chemical-vapor deposition (CVD), and a second film is formed on the substrate using sputtering, wherein the processes are sequentially performed in the same deposition chamber without exposing the substrate to an oxidative atmosphere. The deposition chamber includes a first electrode, and a second electrode located under the first electrode. During the CVD process, a dummy target is mounted on the first electrode and the substrate is mounted on the second electrode, a reactive gas is introduced into the chamber, and high frequency electrical power is applied to both the first and second electrodes, thereby causing the constituents of the reactive gas to deposit on the substrate to form the first film. Subsequently, any remaining reactive gas is removed from the chamber and an automated mechanism removes the dummy target from the first electrode and stores the dummy target in a storage chamber. A sputtering electrode is then mounted on the first electrode and a sputtering gas is introduced into the reaction chamber. High frequency electrical power is then applied to both the first and second electrodes, thereby causing the sputtering gas and sputtering target to deposit the second film on the substrate.

Film manufacturing method using single reaction chamber for

There is provided an electronic device like a TFT using a silicon nitride insulating film of a single layer structure having an excellent dielectric voltage, and a method of producing the electronic device with reliability. In the electronic device, a conductive wiring pattern is deposited on a surface of an electrically insulated substrate, and an insulating layer is formed to cover the wiring pattern and the substrate. The insulating layer is made of a silicon nitride insulating film. A contact angle .theta. between the wiring pattern and the substrate is equals 60.degree. or more, and a value Tn1/Tg of a thickness Tn1 of the silicon nitride insulating film and a thickness Tg of the wiring pattern equals 2 or more. A horizontal distance Tn2 between a rise start position, where the silicon nitride film rises because of a step of the wiring pattern and the top end of the wiring pattern, and Tn1 are in a relation where 0.6.ltoreq.Tn2/Tn1.

Method of sputtering a silicon nitride film

In a thin-film transistor array, a plurality of gate buses and a plurality of source buses are formed on a substrate in such a manner that said gate buses are intersected with said source buses at crossover portions, and a plurality of thin-film transistors are formed on the substrate adjacent to the crossover portion, which are connected to the gate buses and source buses for a driving purpose. Furthermore, an auxiliary bus is formed on either the gate buses, or source buses, shortcircuited portions of which are cut out by means of laser trimming so as to conduct the gate buses or source buses.

Method for manufacturing a thin-film transistor array and a thin-film

In an optical sensor, there is a risk that a short-circuit occurs in a gap between opposite electrodes on a photoconductive body. A pair of band-shaped electrodes each having a width of 'W' are formed on the photoconductive body under the condition that these electrodes are positioned opposite to each other via the gap having an interval of 'L'. A band-shaped first notch portion having a length of 'W/2' and a width of 'L' is formed which is opened to the gap. Furthermore, a second notch portion is formed which is closed other than the portion thereof communicated to the first notch portion. Thus, first and second bridge portions are formed in one electrode where the first and second notch portions have been formed. When the opposite electrodes are shortcircuited, one of these bridge portions is cut out so that the tip portion of the cut electrode functions as another electrode.

Optical sensor including shortcircuit protection having notched

A thin-film transistor array is constructed of at least a first thin-film transistor and a second thin-film transistor connected in parallel with the first thin-film transistor. These transistors are formed on a substrate under the condition that a source bus and a gate bus are connected to these transistors with forming a crossover portion. These parallel-connected transistors drive one pixel of a liquid crystal element. The first and second thin-film transistors are independently positioned in a symmetrically positional relationship with sandwiching the gate and source buses. In accordance with a laser trimming method of the invention, either gate bus or source bus located at one side of the crossover portion is first cut out so as to electrically disconnect the normally operable thin-film transistor from the array.

Growing community of inventors

Miyagi-ken, Japan

Chisato Iwasaki